IRLML6401TRPBF vs IRLML6344TRPBF

Esta comparação detalhada entre IRLML6401TRPBF e IRLML6344TRPBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRLML6401TRPBF IRLML6344TRPBF
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 30 V
Current - Continuous Drain(Id) @ 25°C - 5A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 2.5V, 4.5V
Rds On(Max) @ Id Vgs - 29mOhm @ 5A, 4.5V
Vgs(th)(Max) @ Id - 1.1V @ 10µA
Gate Charge(Qg)(Max) @ Vgs - 6.8 nC @ 4.5 V
Vgs(Max) - ±12V
Input Capacitance(Ciss)(Max) @ Vds - 650 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IRLML6401 -
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs 50mOhm @ 4.3A, 4.5V -
Vgs(th) (Max) @ Id 950mV @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
Compare RFQ