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IRLML6344TRPBF
+Lista de MateriaisMOSFET N-CH 30V 5A MICRO3/SOT23
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRLML6344TRPBF
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Ficha Técnica IRLML6344TRPBF DataSheet
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Pacote SOT-23
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 29mOhm @ 5A, 4.5V |
| Vgs(th)(Max) @ Id | 1.1V @ 10µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.8 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 650 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
Visão Geral
Description
The IRLML6344TRPBF is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for use in various electronic applications that require efficient switching and power management. This particular MOSFET is known for its small size, typically in a surface-mount package, making it suitable for compact circuit designs.
The IRLML6344TRPBF features a low on-resistance, which improves efficiency by reducing power loss during operation. It is often used in DC-DC converters, power management systems, and other applications where fast switching and high efficiency are critical. Additionally, this MOSFET can handle a relatively high current for its size, making it versatile for various applications.
Its design enables it to be used in both consumer electronics and industrial applications, offering reliability and performance. Engineers choose components like the IRLML6344TRPBF for its balance of size, efficiency, and power handling capabilities, which is essential for modern electronics design.
The IRLML6344TRPBF features a low on-resistance, which improves efficiency by reducing power loss during operation. It is often used in DC-DC converters, power management systems, and other applications where fast switching and high efficiency are critical. Additionally, this MOSFET can handle a relatively high current for its size, making it versatile for various applications.
Its design enables it to be used in both consumer electronics and industrial applications, offering reliability and performance. Engineers choose components like the IRLML6344TRPBF for its balance of size, efficiency, and power handling capabilities, which is essential for modern electronics design.
Equivalent
The IRLML6344TRPBF is an N-channel MOSFET. Equivalent products from other manufacturers may include:
1. NXP BSS138
2. ON Semiconductor NTR4170NT1G
3. Diodes Incorporated DMP1045UQ-7
4. Fairchild Semiconductor FDN338P
5. Toshiba SSM3K15FS
It is important to verify the specifications and pin configurations to ensure compatibility in your application.
1. NXP BSS138
2. ON Semiconductor NTR4170NT1G
3. Diodes Incorporated DMP1045UQ-7
4. Fairchild Semiconductor FDN338P
5. Toshiba SSM3K15FS
It is important to verify the specifications and pin configurations to ensure compatibility in your application.
Features
The IRLML6344TRPBF is a MOSFET transistor designed for efficient switching applications. Key features include:
1. N-Channel MOSFET: It is an N-channel device, suitable for low-side switching.
2. Voltage and Current Ratings: It typically operates at a maximum drain-source voltage (V_DS) of 20V and can handle a continuous drain current (I_D) of up to 5.3A.
3. Low On-Resistance: The transistor features a low on-state resistance (R_DS(on)), enhancing efficiency by reducing power loss during operation.
4. Package Type: Available in a small SOT-23 package, making it suitable for compact circuit designs.
5. Fast Switching Speed: It offers fast switching characteristics, which is beneficial for high-speed applications.
6. Thermal Performance: The device is designed to manage heat effectively, ensuring reliability in operation.
7. Enhanced ESD Protection: Built-in features offer enhanced protection against electrostatic discharge.
These attributes make the IRLML6344TRPBF ideal for use in power management, DC-DC converters, and other applications requiring efficient switching capabilities.
1. N-Channel MOSFET: It is an N-channel device, suitable for low-side switching.
2. Voltage and Current Ratings: It typically operates at a maximum drain-source voltage (V_DS) of 20V and can handle a continuous drain current (I_D) of up to 5.3A.
3. Low On-Resistance: The transistor features a low on-state resistance (R_DS(on)), enhancing efficiency by reducing power loss during operation.
4. Package Type: Available in a small SOT-23 package, making it suitable for compact circuit designs.
5. Fast Switching Speed: It offers fast switching characteristics, which is beneficial for high-speed applications.
6. Thermal Performance: The device is designed to manage heat effectively, ensuring reliability in operation.
7. Enhanced ESD Protection: Built-in features offer enhanced protection against electrostatic discharge.
These attributes make the IRLML6344TRPBF ideal for use in power management, DC-DC converters, and other applications requiring efficient switching capabilities.
Pinout
The IRLML6344TRPBF is a MOSFET transistor manufactured by Infineon Technologies (formerly International Rectifier). It typically has a 3-pin configuration, packaged in a standard SOT-23 surface-mount device format. The pins are assigned as follows:
1. Gate (G): This is the control pin that modulates the conductivity between the Drain and Source. A voltage applied to the Gate creates an electric field that enables current flow through the MOSFET.
2. Drain (D): This is the terminal through which the main current enters the MOSFET from the load. It is one of the primary terminals for conduction.
3. Source (S): This is the terminal through which the main current exits the MOSFET. It is connected to the ground or the negative side in typical applications.
The IRLML6344TRPBF is an N-channel MOSFET, meaning it conducts when a positive voltage is applied to the Gate relative to the Source. It is used for switching applications and power management in various electronic devices.
1. Gate (G): This is the control pin that modulates the conductivity between the Drain and Source. A voltage applied to the Gate creates an electric field that enables current flow through the MOSFET.
2. Drain (D): This is the terminal through which the main current enters the MOSFET from the load. It is one of the primary terminals for conduction.
3. Source (S): This is the terminal through which the main current exits the MOSFET. It is connected to the ground or the negative side in typical applications.
The IRLML6344TRPBF is an N-channel MOSFET, meaning it conducts when a positive voltage is applied to the Gate relative to the Source. It is used for switching applications and power management in various electronic devices.
Manufacturer
The IRLML6344TRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that designs, manufactures, and supplies a wide range of semiconductor solutions. Founded in 1999 as a spin-off from Siemens AG, Infineon has established itself as a leader in the semiconductor industry.
Infineon's product portfolio includes power semiconductors, microcontrollers, sensors, and security solutions. These products are utilized in various applications across automotive, industrial, consumer electronics, and communication markets. The company is particularly noted for its innovations in energy efficiency, mobility, and security technologies.
In addition to its extensive range of semiconductor products, Infineon is recognized for its focus on sustainability and commitment to reducing environmental impact through its operations and product offerings. With a global presence, Infineon serves customers worldwide, maintaining a strong emphasis on research and development to drive technological advancements in the semiconductor field.
Infineon's product portfolio includes power semiconductors, microcontrollers, sensors, and security solutions. These products are utilized in various applications across automotive, industrial, consumer electronics, and communication markets. The company is particularly noted for its innovations in energy efficiency, mobility, and security technologies.
In addition to its extensive range of semiconductor products, Infineon is recognized for its focus on sustainability and commitment to reducing environmental impact through its operations and product offerings. With a global presence, Infineon serves customers worldwide, maintaining a strong emphasis on research and development to drive technological advancements in the semiconductor field.
Application
The IRLML6344TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Its compact size and efficient performance make it suitable for use in DC-DC converters, load switches, battery management systems, and power supply circuits. It is often employed in portable electronics, computer hardware, and automotive applications, where space-saving and efficient power handling are crucial. The MOSFET's low on-resistance and fast switching capabilities enhance energy efficiency and thermal performance, making it ideal for high-frequency and low-voltage applications.
Package
The IRLML6344TRPBF is a MOSFET transistor housed in a Surface-Mount Device (SMD) package, specifically in the SOT-23 configuration. This package type is compact and suitable for applications requiring efficient board space usage.
