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IRLML0040TRPBF
+Lista de MateriaisMOSFET N-CH 40V 3.6A SOT23
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRLML0040TRPBF
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Ficha Técnica IRLML0040TRPBF DataSheet
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Pacote SOT23
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 3.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 56mOhm @ 3.6A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 3.9 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 266 pF @ 25 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
Visão Geral
Description
Key features of the IRLML0040TRPBF include:
1. Type and Package: It is an N-channel MOSFET, typically packaged in a lead-free, RoHS-compliant SOT-23 format, making it suitable for high-density circuit boards.
2. Performance Characteristics: It is known for its low on-resistance (Rds(on)), which minimizes power loss and heat generation, thereby improving efficiency in power-sensitive applications.
3. Applications: Commonly used in low-voltage switching applications, such as power management in portable devices, DC-DC converters, and as a load switch in battery-powered devices.
4. Temperature and Reliability: Designed to handle a wide range of operating temperatures and ensure reliable performance over time.
Overall, the IRLML0040TRPBF is valued for its compact size, efficiency, and reliability in electronic circuits requiring efficient switching and power control.
Equivalent
1. BSN20 – N-channel logic level MOSFET by Infineon.
2. BSS138 – General-purpose N-channel MOSFET by ON Semiconductor.
3. 2N7002 – N-channel MOSFET by Fairchild Semiconductor.
4. FDV301N – N-channel MOSFET by ON Semiconductor.
When selecting an equivalent, ensure to verify key specifications like voltage, current ratings, Rds(on), and package compatibility.
Features
1. Type: N-channel MOSFET.
2. Voltage & Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 20V and a continuous drain current (I_D) of around 5.9A.
3. R_DS(on): Low on-state resistance, enhancing efficiency by minimizing power loss. It usually has an R_DS(on) of about 22mΩ at 4.5V gate-source voltage.
4. Package: Offered in a compact SOT-23 package, suitable for space-constrained designs.
5. Applications: Ideal for use in load switching, DC-DC converters, and battery-powered devices.
6. Thermal Resistance: Designed to efficiently dissipate heat, aiding reliability in thermal management.
7. Lead-Free: Compliant with RoHS standards, making it environmentally friendly.
These features make the IRLML0040TRPBF a versatile choice for designers looking to optimize power efficiency and footprint in their electronic products.
Pinout
1. Gate (G) - This pin is used to control the MOSFET's switching operation. A voltage applied here will turn the MOSFET on or off.
2. Source (S) - This terminal is typically connected to the ground in common-source configurations.
3. Drain (D) - The drain is the output terminal where the load is connected. It allows current to flow through when the MOSFET is in the "on" state.
The IRLML0040TRPBF is designed for low-voltage applications such as DC-DC converters and power management in portable devices. It offers low on-resistance and is optimized for high efficiency and fast switching.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supply circuits for efficient energy conversion.
2. Battery-Operated Devices: Ideal for smartphones, tablets, and wearables due to low power consumption.
3. LED Lighting: Utilized for driving LEDs with precision and energy efficiency.
4. Load Switches: Acts as a switch in electronic circuits, providing rapid ON/OFF control.
5. Motor Control: Employed in controlling small motors in applications like drones and toys.
Its versatility makes it suitable for compact and energy-sensitive electronic applications.