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IRFH5010TRPBF
+Lista de MateriaisMOSFET N-CH 100V 13A/100A 8PQFN
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRFH5010TRPBF
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Ficha Técnica IRFH5010TRPBF DataSheet
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Pacote PQFN-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Ta), 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 9mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4340 pF @ 25 V |
| Power Dissipation (Max) | 3.6W (Ta), 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Visão Geral
Description
The IRFH5010TRPBF is a power MOSFET designed by Infineon Technologies, commonly used in electronic circuits for switching and amplification applications. It features a trench structure that enhances performance by reducing on-resistance and improving current handling capability. This device is part of the HEXFET family, known for reliability and efficiency in various applications, such as automotive, industrial, and consumer electronics.
Key specifications of the IRFH5010TRPBF include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 90A, making it suitable for high-power applications. It also offers a low gate charge, which minimizes power loss and increases switching speed. The MOSFET is packaged in a DirectFET format, providing improved thermal performance and allowing for compact PCB design.
Overall, the IRFH5010TRPBF is valued for its robust design, efficiency, and high current capacity, making it a popular choice among engineers for demanding electronic applications.
Key specifications of the IRFH5010TRPBF include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 90A, making it suitable for high-power applications. It also offers a low gate charge, which minimizes power loss and increases switching speed. The MOSFET is packaged in a DirectFET format, providing improved thermal performance and allowing for compact PCB design.
Overall, the IRFH5010TRPBF is valued for its robust design, efficiency, and high current capacity, making it a popular choice among engineers for demanding electronic applications.
Equivalent
The IRFH5010TRPBF is a HEXFET power MOSFET by Infineon Technologies. Equivalent products typically have similar specifications like voltage rating, current capacity, and package type. Potential equivalents include the Vishay SiR466DP and the ON Semiconductor NVMFS5C404NL. However, always compare the datasheets for precise electrical characteristics and ensure compatibility with your application requirements.
Features
The IRFH5010TRPBF is a power MOSFET from Infineon Technologies, designed for efficient switching applications. Key features include:
1. Low On-Resistance: It exhibits low on-resistance (R_DS(on)), minimizing power losses and improving efficiency.
2. Fast Switching: Offers fast switching performance, which is beneficial for high-frequency applications.
3. N-Channel MOSFET: It is an N-channel device, typically known for its ease of use in high-side switching.
4. Thermal Performance: Designed for enhanced thermal efficiency, which helps in better heat dissipation.
5. Ruggedness: Built to handle high-current loads and withstand challenging conditions, making it suitable for industrial and automotive applications.
6. Compact Package: Available in a compact package, facilitating ease of use in space-constrained designs.
7. RoHS Compliant: The device is environmentally friendly, adhering to the Restriction of Hazardous Substances Directive.
Overall, the IRFH5010TRPBF is ideal for applications requiring efficient power management and robust performance.
1. Low On-Resistance: It exhibits low on-resistance (R_DS(on)), minimizing power losses and improving efficiency.
2. Fast Switching: Offers fast switching performance, which is beneficial for high-frequency applications.
3. N-Channel MOSFET: It is an N-channel device, typically known for its ease of use in high-side switching.
4. Thermal Performance: Designed for enhanced thermal efficiency, which helps in better heat dissipation.
5. Ruggedness: Built to handle high-current loads and withstand challenging conditions, making it suitable for industrial and automotive applications.
6. Compact Package: Available in a compact package, facilitating ease of use in space-constrained designs.
7. RoHS Compliant: The device is environmentally friendly, adhering to the Restriction of Hazardous Substances Directive.
Overall, the IRFH5010TRPBF is ideal for applications requiring efficient power management and robust performance.
Pinout
The IRFH5010TRPBF is a power MOSFET designed by Infineon Technologies, primarily used for switching applications. It typically comes in a Power QFN (Quad Flat No-leads) package with a pin count of 8. The primary functions of the IRFH5010TRPBF include high-efficiency power conversion and switching, making it suitable for applications involving DC-DC converters, synchronous rectification, and motor drives.
The key features of this MOSFET include low on-state resistance (R_DS(on)), fast switching speeds, and a compact package that supports efficient thermal management. This makes it ideal for applications requiring high power density and efficiency.
For precise pin configuration and schematic, always refer to the official datasheet provided by the manufacturer, as it contains detailed information about the pin functions and package dimensions.
The key features of this MOSFET include low on-state resistance (R_DS(on)), fast switching speeds, and a compact package that supports efficient thermal management. This makes it ideal for applications requiring high power density and efficiency.
For precise pin configuration and schematic, always refer to the official datasheet provided by the manufacturer, as it contains detailed information about the pin functions and package dimensions.
Manufacturer
The IRFH5010TRPBF is manufactured by Infineon Technologies. Infineon is a German multinational corporation that specializes in semiconductor solutions. The company is known for its innovations in electronics that serve various industries, including automotive, industrial power control, power management, and digital security. Infineon provides a wide range of semiconductor products, including microcontrollers, power semiconductors, sensors, and security ICs, among others. They are recognized for their focus on energy efficiency, mobility, and security in their technology solutions.
Application
The IRFH5010TRPBF is a power MOSFET commonly used in applications requiring efficient switching and high power handling. Key application areas include:
1. DC-DC Converters: Utilized in power management systems for efficient voltage regulation.
2. Motor Control: Employed in driving motors in automotive and industrial applications.
3. Load Switching: Ideal for switching heavy loads in power distribution systems.
4. Power Supplies: Used in both linear and switching power supplies for improved efficiency.
5. Battery Management: Integrated into battery protection circuits and charging systems.
6. Telecommunications: Supports power management in telecommunication infrastructure.
Its characteristics, such as low on-resistance and high speed, make it suitable for these applications.
1. DC-DC Converters: Utilized in power management systems for efficient voltage regulation.
2. Motor Control: Employed in driving motors in automotive and industrial applications.
3. Load Switching: Ideal for switching heavy loads in power distribution systems.
4. Power Supplies: Used in both linear and switching power supplies for improved efficiency.
5. Battery Management: Integrated into battery protection circuits and charging systems.
6. Telecommunications: Supports power management in telecommunication infrastructure.
Its characteristics, such as low on-resistance and high speed, make it suitable for these applications.
Package
The IRFH5010TRPBF is a power MOSFET typically supplied in a PQFN (Power Quad Flat No-Lead) package, which provides a compact, surface-mount design optimized for efficient heat dissipation and electrical performance.
