ISL6612ACBZ vs ISL6608IBZ

Esta comparação detalhada entre ISL6612ACBZ e ISL6608IBZ fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

ISL6612ACBZ

Renesas Electronics America Inc.

Lifecycle: Active
Stock: 5184 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

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Part B

ISL6608IBZ

Renesas Electronics America Inc.

Lifecycle: Active
Stock: 5051 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	ISL6612ACBZ	ISL6608IBZ
Part Status	Last Time Buy	Obsolete
Driven Configuration	Half-Bridge	Half-Bridge
Channel Type	Synchronous	Synchronous
Number of Drivers	2	2
Gate Type	N-Channel MOSFET	N-Channel MOSFET
Voltage - Supply	10.8V ~ 13.2V	4.5V ~ 5.5V
Current - Peak Output(Source Sink)	1.25A, 2A	2A, 2A
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	36 V	22 V
Rise / Fall Time(Typ)	26ns, 18ns	8ns, 8ns
Operating Temperature	0°C ~ 125°C (TJ)	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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