MC33151DR2G vs MC33171DR2G

Esta comparação detalhada entre MC33151DR2G e MC33171DR2G fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

MC33171DR2G

onsemi

Lifecycle
Active
Stock
2683 PCS
Package
SOIC-8
Series
Linear - Amplificadores - Instrumentação, OP Amps, Buffer Amps
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MC33151DR2G MC33171DR2G
Part Status Active Active
Driven Configuration Low-Side -
Channel Type Independent -
Number of Drivers 2 -
Gate Type N-Channel MOSFET -
Voltage - Supply 6.5V ~ 18V -
Logic Voltage - VILVIH 0.8V, 2.6V -
Current - Peak Output(Source Sink) 1.5A, 1.5A -
Input Type Inverting -
Rise / Fall Time(Typ) 31ns, 32ns -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 85°C
Mounting Type Surface Mount Surface Mount
Amplifier Type - General Purpose
Number of Circuits - 1
Slew Rate - 2.1V/µs
Gain Bandwidth Product - 1.8 MHz
Current - Input Bias - 20 nA
Voltage - Input Offset - 2 mV
Supply Current - 220µA
Current - Output / Channel - 27 mA
Voltage - Supply Span(Min) - 3 V
Voltage - Supply Span(Max) - 44 V
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