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MC33151DR2G
+Lista de MateriaisIC GATE DRVR LOW-SIDE 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #MC33151DR2G
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Pacote SOIC-8
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Em Estoque6915
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Driven Configuration | Low-Side |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 6.5V ~ 18V |
| Logic Voltage - VILVIH | 0.8V, 2.6V |
| Current - Peak Output(Source Sink) | 1.5A, 1.5A |
| Input Type | Inverting |
| Rise / Fall Time(Typ) | 31ns, 32ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Equivalent
1. TC4427 by Microchip Technology
2. FAN3100 by ON Semiconductor
3. MIC4427 by Microchip Technology
4. UCC27323 by Texas Instruments
5. MCP1407 by Microchip Technology
These alternatives offer similar functionality with variations in performance specifications, packaging, and manufacturer. Always verify compatibility with specific application requirements before substituting components.
Features
1. High-Speed Performance: It delivers fast switching times with short propagation delays and transition times.
2. Output Current: Capable of sourcing and sinking high peak currents, which is ideal for driving power MOSFETs and IGBTs.
3. Input Compatibility: Compatible with TTL and CMOS logic levels, making it versatile for digital circuitry.
4. Supply Voltage Range: Operates over a wide supply voltage range, providing flexibility in various applications.
5. Latch-Up Protection: Built-in protection against latch-up, enhancing reliability in adverse operating conditions.
6. Undervoltage Lockout (UVLO): Ensures the driver operates only when the supply voltage is above a certain threshold, protecting the MOSFETs from damage.
7. Low Output Impedance: Ensures minimal power loss and efficient operation.
8. Thermal Shutdown: Provides protection against excessive junction temperatures.
9. Package: Available in SOIC-8 package, which is suitable for compact designs.
These features make the MC33151DR2G suitable for applications requiring efficient and reliable MOSFET gate driving.
Pinout
1. Output A: Connects to the gate of the first MOSFET/IGBT.
2. Ground: Common ground connection for both channels.
3. Input A: Receives the control input signal for the first driver channel.
4. V_CC: Supplies the positive voltage for the IC operation.
5. Input B: Receives the control input signal for the second driver channel.
6. Ground: Common ground connection for both channels.
7. Output B: Connects to the gate of the second MOSFET/IGBT.
8. Ground: Common ground connection for both channels.
The pin configuration and functions ensure the IC can drive two separate power transistors independently, making it suitable for push-pull or half-bridge applications.
Manufacturer
Onsemi is known for providing energy-efficient innovations that help reduce global energy usage. The company focuses on creating products that enhance performance while minimizing energy consumption, making it a significant player in the movement towards more sustainable and efficient electronic solutions.
Application
1. DC-DC Converters: Enhances performance by driving the MOSFETs at high speeds.
2. Power Supplies: Used in switching power supply circuits for improved efficiency.
3. Motor Control: Drives the MOSFETs in motor drive circuits for precise control.
4. Inverters: Utilized in inverter circuits for effective power conversion.
5. Lighting Ballasts: Improves efficiency in electronic ballast designs.
Its fast rise and fall times make it suitable for applications demanding rapid switching and high-frequency operation.