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MC33152DR2G
+Lista de MateriaisIC GATE DRVR LOW-SIDE 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #MC33152DR2G
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Pacote SOIC-8
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Em Estoque6426
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Driven Configuration | Low-Side |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 6.1V ~ 18V |
| Logic Voltage - VILVIH | 0.8V, 2.6V |
| Current - Peak Output(Source Sink) | 1.5A, 1.5A |
| Input Type | Non-Inverting |
| Rise / Fall Time(Typ) | 36ns, 32ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features of the MC33152DR2G include low output impedance, fast rise and fall times, and short propagation delays, which contribute to minimizing switching losses and enhancing overall system efficiency. It operates over a wide voltage range, typically from 4.5 V to 18 V, making it versatile for different applications. The device is available in a standard SOIC-8 package, which lends itself to compact and space-constrained design environments.
Overall, the MC33152DR2G serves as a reliable solution for applications requiring efficient and high-speed switching, facilitating improved power management and reduced electromagnetic interference.
Equivalent
Features
1. High-Speed Operation: Fast rise and fall times, typically around 20 nanoseconds, which enhances the efficiency of power conversion systems.
2. High Peak Output Current: Can deliver up to 1.5A of peak current, suitable for driving large gate capacitances.
3. Wide Supply Voltage Range: Operates between 4.5V and 18V, providing flexibility for various applications.
4. Low Output Impedance: Ensures minimal power losses and better driving capability for capacitive loads.
5. Under-Voltage Lockout (UVLO): Protects the circuit from operating in a low-voltage condition, ensuring reliable performance.
6. Thermal Shutdown Protection: Guards against overheating, enhancing device longevity and reliability.
7. Dual Non-Inverting Channels: Allows for simultaneous control of two separate devices, useful in half-bridge or full-bridge configurations.
These features make the MC33152DR2G suitable for applications such as switch-mode power supplies, motor control, and other high-frequency switching circuits.
Pinout
The device features include:
1. Two independent drivers (dual-driver).
2. The ability to drive both high-side and low-side MOSFETs.
3. High-speed switching performance with short rise and fall times.
4. Input logic compatible with TTL and CMOS levels.
5. Low output impedance, which ensures efficient power transfer to the MOSFET gates.
These capabilities make the MC33152DR2G suitable for applications such as switch-mode power supplies, motor drivers, and other systems requiring efficient and fast switching control of power transistors.
Manufacturer
Application
1. Switch-Mode Power Supplies (SMPS): Enhances switching speed for improved power efficiency.
2. Motor Control: Drives MOSFETs in motor control circuits, supporting precise speed and torque control.
3. DC-DC Converters: Aids in efficient energy conversion in voltage regulation circuits.
4. Inverters: Used in inverting circuits for renewable energy and power backup systems.
5. Lighting Ballasts: Supports high-efficiency lighting solutions by controlling power delivery.
Its high-speed capability and low output impedance make it suitable for high-frequency and fast-switching applications.