MC33171DR2G vs MC33153DR2G

Esta comparação detalhada entre MC33171DR2G e MC33153DR2G fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MC33171DR2G

onsemi

Lifecycle
Active
Stock
2683 PCS
Package
SOIC-8
Series
Linear - Amplificadores - Instrumentação, OP Amps, Buffer Amps
+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MC33171DR2G MC33153DR2G
Part Status Active Active
Driven Configuration - Low-Side
Channel Type - Single
Number of Drivers - 1
Gate Type - IGBT, N-Channel MOSFET
Voltage - Supply - 11V ~ 20V
Logic Voltage - VILVIH - 1.2V, 3.2V
Current - Peak Output(Source Sink) - 1A, 2A
Input Type - Inverting
Rise / Fall Time(Typ) - 17ns, 17ns
Operating Temperature -40°C ~ 85°C -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Amplifier Type General Purpose -
Number of Circuits 1 -
Slew Rate 2.1V/µs -
Gain Bandwidth Product 1.8 MHz -
Current - Input Bias 20 nA -
Voltage - Input Offset 2 mV -
Supply Current 220µA -
Current - Output / Channel 27 mA -
Voltage - Supply Span(Min) 3 V -
Voltage - Supply Span(Max) 44 V -
Compare RFQ