MUN5330DW1T1G vs MUN5335DW1T2

Esta comparação detalhada entre MUN5330DW1T1G e MUN5335DW1T2 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MUN5330DW1T1G

onsemi

Lifecycle: Active
Stock: 16706 PCS
Package: SC-88
Series: Transistores - Bipolares (BJT) - Arrays, Pre-Biased

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Part B

MUN5335DW1T2

onsemi

Lifecycle: Active
Stock: 3602 PCS
Package: SC-88
Series: Transistores - Bipolares (BJT) - Arrays, Pre-Biased

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	MUN5330DW1T1G	MUN5335DW1T2
Supplier	onsemi	Rochester Electronics, LLC
Part Status	Active	Obsolete
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector(Ic)(Max)	100mA	100mA
Voltage - Collector Emitter Breakdown(Max)	50V	50V
Resistor - Base(R1)	1kOhms	2.2kOhms
Resistor - Emitter Base(R2)	1kOhms	47kOhms
DC Current Gain(h FE)(Min) @ Ic Vce	3 @ 5mA, 10V	80 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic	250mV @ 5mA, 10mA	-
Current - Collector Cutoff(Max)	500nA	-
Power - Max	250mW	-
Mounting Type	Surface Mount	Surface Mount

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