NCP5181DR2G vs NCP51145PDR2G

Esta comparação detalhada entre NCP5181DR2G e NCP51145PDR2G fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCP5181DR2G

onsemi

Lifecycle: Active
Stock: 4243 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Part B

NCP51145PDR2G

onsemi

Lifecycle: Active
Stock: 2518 PCS
Package: SOIC-8
Series: PMIC - Voltage Regulators - Special Purpose

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	NCP5181DR2G	NCP51145PDR2G
Part Status	Last Time Buy	Obsolete
Applications	-	LDO (Linear), DDR
Voltage - Input	-	1V ~ 5.5V
Number of Outputs	-	1
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 85°C
Mounting Type	Surface Mount	Surface Mount
Driven Configuration	Half-Bridge	-
Channel Type	Independent	-
Number of Drivers	2	-
Gate Type	N-Channel MOSFET	-
Voltage - Supply	10V ~ 20V	-
Logic Voltage - VILVIH	0.8V, 2.3V	-
Current - Peak Output(Source Sink)	1.4A, 2.2A	-
Input Type	Non-Inverting	-
High Side Voltage - Max(Bootstrap)	600 V	-
Rise / Fall Time(Typ)	40ns, 20ns	-

Compare RFQ