NCV5183DR2G vs NCV5106ADR2G

Esta comparação detalhada entre NCV5183DR2G e NCV5106ADR2G fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCV5183DR2G

onsemi

Lifecycle: Active
Stock: 4856 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Part B

NCV5106ADR2G

onsemi

Lifecycle: Active
Stock: 5000 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	NCV5183DR2G	NCV5106ADR2G
Part Status	Active	Active
Driven Configuration	Half-Bridge	Half-Bridge
Channel Type	Independent	Synchronous
Number of Drivers	2	2
Gate Type	N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	9V ~ 18V	10V ~ 20V
Logic Voltage - VILVIH	1.2V, 2.5V	0.8V, 2.3V
Current - Peak Output(Source Sink)	4.3A, 4.3A	250mA, 500mA
Input Type	Non-Inverting	Inverting, Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	600 V
Rise / Fall Time(Typ)	12ns, 12ns	85ns, 35ns
Operating Temperature	-40°C ~ 125°C (TJ)	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Series	Automotive, AEC-Q100	-

Compare RFQ