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NCV5183DR2G
+Lista de MateriaisIC GATE DRVR HALF-BRIDGE 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #NCV5183DR2G
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Pacote SOIC-8
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Em Estoque4856
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q100 |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 9V ~ 18V |
| LogicVoltage-VILVIH | 1.2V, 2.5V |
| Current-PeakOutput(SourceSink) | 4.3A, 4.3A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 12ns, 12ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Visão Geral
Description
Key features of the NCV5183DR2G include a wide input voltage range, high peak current capability, and fast switching speeds, making it suitable for high-frequency and high-efficiency power conversion. The device also incorporates protection features such as undervoltage lockout (UVLO) and interlock functionality to prevent shoot-through conditions, enhancing overall system reliability and safety.
The NCV5183DR2G is housed in a compact SOIC-8 package, which facilitates easy integration into circuit designs while maintaining thermal efficiency. Its robust design and performance characteristics make it a popular choice among engineers for a variety of industrial and automotive applications.
Equivalent
Features
1. High Voltage Capability: Supports up to 100V on the driver pin, suitable for high-voltage applications.
2. Bootstrap Operation: Includes bootstrap functionality for driving the high-side MOSFET.
3. Fast Switching Speeds: Enables efficient operation with fast turn-on and turn-off times.
4. Protection Features: Equipped with under-voltage lockout (UVLO) and over-temperature protection to enhance reliability.
5. Low Quiescent Current: Minimizes power consumption when in idle or standby mode.
6. Wide Temperature Range: Operates effectively across a broad temperature spectrum, making it suitable for automotive environments.
7. Compact Package: Available in a small, space-saving package (such as SOIC-8) for easy integration into various designs.
These features make the NCV5183DR2G an effective solution for high-voltage, high-frequency, and space-constrained applications.
Pinout
### Pin Count:
- 8 Pins
### Key Functions:
1. Gate Driver Output (GATE): Drives the gate of an external N-channel MOSFET.
2. Supply Voltage (VCC): Provides the power supply to the IC.
3. Ground (GND): Common ground reference for the device.
4. Input (IN): Accepts control input signal to turn on/off the MOSFET.
5. Boost Voltage (BOOT): Connects to a bootstrap capacitor to provide the necessary gate-to-source voltage for the high-side MOSFET.
6. Source (SRC): Connects to the source of the high-side MOSFET and serves as a return path for the bootstrap capacitor.
These pins and their corresponding functions are designed to enable efficient switching and control of high-side power devices.
Manufacturer
Application
1. Automotive Systems: Used in electric and hybrid vehicles for driving MOSFETs and IGBTs in inverter and converter circuits.
2. Power Supplies: Enhances performance in switch-mode power supplies (SMPS) by providing efficient gate driving for power transistors.
3. Motor Drives: Applicable in driving motors where precise control and high efficiency are critical.
4. HVAC Systems: Used in heating, ventilation, and air conditioning systems to improve energy efficiency and reliability.
Its robust design ensures high reliability in harsh environments, aligning with automotive industry standards.