SI2308BDS-T1-GE3 vs SI2302CDS-T1-E3

Esta comparação detalhada entre SI2308BDS-T1-GE3 e SI2302CDS-T1-E3 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2308BDS-T1-GE3 SI2302CDS-T1-E3
Series TrenchFET® TrenchFET®
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 20 V
Current - Continuous Drain(Id) @ 25°C - 2.6A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 2.5V, 4.5V
Rds On(Max) @ Id Vgs - 57mOhm @ 3.6A, 4.5V
Vgs(th)(Max) @ Id - 850mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5.5 nC @ 4.5 V
Vgs(Max) - ±8V
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number SI2308 -
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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