SI2319DS-T1-E3 vs SI2312BDS-T1-E3

Esta comparação detalhada entre SI2319DS-T1-E3 e SI2312BDS-T1-E3 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Specification SI2319DS-T1-E3 SI2312BDS-T1-E3
Series TrenchFET® TrenchFET®
Part Status Obsolete Active
Base Product Number SI2319 -
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V -
Power Dissipation (Max) 750mW (Ta) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 3.9A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 1.8V, 4.5V
Rds On(Max) @ Id Vgs - 31mOhm @ 5A, 4.5V
Vgs(th)(Max) @ Id - 850mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 12 nC @ 4.5 V
Vgs(Max) - ±8V
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