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SI2319DS-T1-E3
+Lista de MateriaisMOSFET P-CH 40V 2.3A SOT23-3
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FabricanteVishay Siliconix
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Peça do Fabricante #SI2319DS-T1-E3
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Em Estoque5584
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| PartStatus | Obsolete |
| BaseProductNumber | SI2319 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 2.3A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 82mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 470 pF @ 20 V |
| PowerDissipation(Max) | 750mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
The SI2319DS-T1-E3 is a N-channel MOSFET from Vishay, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: 30V
- Current Rating: 6.5A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-speed performance
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs
Commonly used in power management, DC-DC converters, load switching, and battery protection circuits, it offers low power loss and high reliability. The T1-E3 suffix indicates tape-and-reel packaging for automated assembly.
For detailed specs, refer to the datasheet or Vishay’s product page.
- Voltage Rating: 30V
- Current Rating: 6.5A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-speed performance
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs
Commonly used in power management, DC-DC converters, load switching, and battery protection circuits, it offers low power loss and high reliability. The T1-E3 suffix indicates tape-and-reel packaging for automated assembly.
For detailed specs, refer to the datasheet or Vishay’s product page.
Equivalent
Equivalent products to the SI2319DS-T1-E3 (a P-channel MOSFET) include:
- AO3401 (AOS)
- DMG2305UX (Diodes Inc.)
- IRLML6402 (Infineon)
- FDC5612P (Fairchild/ON Semi)
These alternatives offer similar specs (e.g., -20V, -4.3A) in SOT-23 packages. Verify exact parameters for your application.
- AO3401 (AOS)
- DMG2305UX (Diodes Inc.)
- IRLML6402 (Infineon)
- FDC5612P (Fairchild/ON Semi)
These alternatives offer similar specs (e.g., -20V, -4.3A) in SOT-23 packages. Verify exact parameters for your application.
Features
The SI2319DS-T1-E3 is a N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 6.5A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 25mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1V (typ)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters
This MOSFET is optimized for high efficiency and low power loss in portable and battery-powered devices.
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 6.5A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 25mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1V (typ)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters
This MOSFET is optimized for high efficiency and low power loss in portable and battery-powered devices.
Pinout
The SI2319DS-T1-E3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (P-channel).
3. Drain (D) – Output connection, switches to ground when active.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) for efficient power handling
Commonly used in load switching, power management, and battery protection circuits.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (P-channel).
3. Drain (D) – Output connection, switches to ground when active.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) for efficient power handling
Commonly used in load switching, power management, and battery protection circuits.
Application
The SI2319DS-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in low-voltage applications.
4. Motor Control – Small motor drivers in consumer electronics.
5. Load Switching – On/off control in power-sensitive circuits.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in low-voltage applications.
4. Motor Control – Small motor drivers in consumer electronics.
5. Load Switching – On/off control in power-sensitive circuits.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.
Package
The SI2319DS-T1-E3 is a P-channel MOSFET in a SOT-23-3 surface-mount package. It is compact, suitable for low-power applications, and features three pins for easy PCB integration. The package is industry-standard, offering good thermal performance and space efficiency.
