STGW40V60DF vs STGW45NC60WD

Esta comparação detalhada entre STGW40V60DF e STGW45NC60WD fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

STGW40V60DF

STMicroeletrônica

Lifecycle: Active
Stock: 7067 PCS
Package: TO-247
Series: Transistores - IGBTs - Single

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Part B

STGW45NC60WD

STMicroeletrônica

Lifecycle: Active
Stock: 9554 PCS
Package: TO-247-3
Series: Transistores - IGBTs - Single

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	STGW40V60DF	STGW45NC60WD
Supplier	-	STMicroelectronics
Series	-	PowerMESH™
Part Status	Active	Obsolete
Voltage - Collector Emitter Breakdown(Max)	600 V	600 V
Current - Collector(Ic)(Max)	80 A	90 A
Current - Collector Pulsed(Icm)	160 A	230 A
Vce(on)(Max) @ Vge Ic	2.3V @ 15V, 40A	2.6V @ 15V, 30A
Power - Max	283 W	285 W
Switching Energy	456µJ (on), 411µJ (off)	302µJ (on), 349µJ (off)
Input Type	Standard	Standard
Gate Charge	226 nC	126 nC
Td(on / off) @ 25°C	52ns/208ns	33ns/168ns
Test Condition	400V, 40A, 10Ohm, 15V	390V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	41 ns	45 ns
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
IGBT Type	Trench Field Stop	-

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