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2SC5566-TD-E
+Lista de MateriaisTRANS NPN 50V 4A PCP
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Fabricanteonsemi
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Peça do Fabricante #2SC5566-TD-E
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Pacote TO-243AA
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Especificações
| Atributo | Valor |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 4 A |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Vce Saturation(Max) @ Ib Ic | 225mV @ 100mA, 2A |
| Current - Collector Cutoff(Max) | 1µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 500mA, 2V |
| Power - Max | 1.3 W |
| Frequency - Transition | 400MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The 2SC5566-TD-E is a high-power NPN bipolar junction transistor (BJT) commonly used in audio frequency power amplification and high-speed switching applications. Manufactured by Toshiba, this transistor is part of the 2SC series and is known for its durability and efficiency in handling high currents. It features a collector-emitter voltage (V_CEO) of around 180V and a collector current (I_C) of up to 12A, making it suitable for driving large loads. The transistor is often used in push-pull amplifier stages due to its high gain and low distortion characteristics.
The device is typically housed in a TO-3P package, which provides efficient heat dissipation and makes it ideal for applications requiring robust thermal management. It is designed to operate in a wide range of temperatures, making it versatile for various environmental conditions. Common applications include audio amplifiers, power supply units, and industrial equipment. For optimal performance, it's important to ensure proper biasing and heat management when integrating the 2SC5566-TD-E into circuits.
The device is typically housed in a TO-3P package, which provides efficient heat dissipation and makes it ideal for applications requiring robust thermal management. It is designed to operate in a wide range of temperatures, making it versatile for various environmental conditions. Common applications include audio amplifiers, power supply units, and industrial equipment. For optimal performance, it's important to ensure proper biasing and heat management when integrating the 2SC5566-TD-E into circuits.
Equivalent
The 2SC5566-TD-E is a high-frequency NPN bipolar junction transistor. Equivalent products include transistors like the 2SC5770, 2SC5125, and 2SC5126, which are used in similar RF amplification applications. When selecting an equivalent, ensure that the electrical characteristics such as voltage, current, and power ratings, as well as the package type, match your specific requirements. Always consult the datasheet for precise specifications and compatibility.
Features
The 2SC5566-TD-E is a NPN bipolar junction transistor (BJT) known for its high-speed switching capabilities. Key features include:
1. Voltage and Current Ratings: It typically offers a collector-emitter voltage (V_CEO) of around 180V and a collector current (I_C) of approximately 10A.
2. Power Dissipation: This transistor can handle a power dissipation (P_D) of around 100W, making it suitable for high-power applications.
3. High-Speed Switching: The 2SC5566-TD-E is designed for fast switching, which is critical for applications in switching power supplies and other high-frequency circuits.
4. Package Type: Often available in a TO-3P package, which provides good thermal performance and ease of mounting.
5. Applications: It is commonly used in audio amplifiers, power switching circuits, and motor control applications due to its robustness and efficiency.
6. Thermal Resistance: It has a low thermal resistance, enhancing its reliability and lifespan in demanding conditions.
These features make the 2SC5566-TD-E a versatile component in various electronic applications requiring high efficiency and reliability.
1. Voltage and Current Ratings: It typically offers a collector-emitter voltage (V_CEO) of around 180V and a collector current (I_C) of approximately 10A.
2. Power Dissipation: This transistor can handle a power dissipation (P_D) of around 100W, making it suitable for high-power applications.
3. High-Speed Switching: The 2SC5566-TD-E is designed for fast switching, which is critical for applications in switching power supplies and other high-frequency circuits.
4. Package Type: Often available in a TO-3P package, which provides good thermal performance and ease of mounting.
5. Applications: It is commonly used in audio amplifiers, power switching circuits, and motor control applications due to its robustness and efficiency.
6. Thermal Resistance: It has a low thermal resistance, enhancing its reliability and lifespan in demanding conditions.
These features make the 2SC5566-TD-E a versatile component in various electronic applications requiring high efficiency and reliability.
Pinout
The 2SC5566-TD-E is a NPN bipolar junction transistor (BJT). It typically comes in a package with three pins: the collector, the base, and the emitter. The primary function of this transistor is to amplify current, making it suitable for use in various applications such as switches and signal amplification. It is often used in high-frequency amplifier circuits due to its high-speed switching capabilities.
Manufacturer
The manufacturer of the 2SC5566-TD-E is ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor manufacturing company that specializes in the design, development, and production of a wide range of semiconductor components. The company's offerings include power and signal management, logic, discrete, and custom devices for a variety of applications, such as automotive, industrial, cloud power, and Internet of Things (IoT). onsemi is recognized for its focus on energy-efficient solutions and plays a significant role in enabling and advancing electronics systems across a broad spectrum of industries.
Application
The 2SC5566-TD-E is a high-frequency NPN bipolar junction transistor (BJT) commonly used in RF amplification applications. Its key application areas include:
1. RF Amplifiers: Utilized in RF amplification circuits due to its high-frequency performance.
2. Telecommunications: Functions in transmitter and receiver circuits within communication devices.
3. Audio Amplifiers: Employed in audio frequency power amplification.
4. Switching Applications: Used in fast switching circuits because of its high-speed capabilities.
5. Oscillator Circuits: Acts in oscillator circuits for generating high-frequency signals.
These applications leverage the transistor's characteristics like high gain, low noise, and high-speed switching.
1. RF Amplifiers: Utilized in RF amplification circuits due to its high-frequency performance.
2. Telecommunications: Functions in transmitter and receiver circuits within communication devices.
3. Audio Amplifiers: Employed in audio frequency power amplification.
4. Switching Applications: Used in fast switching circuits because of its high-speed capabilities.
5. Oscillator Circuits: Acts in oscillator circuits for generating high-frequency signals.
These applications leverage the transistor's characteristics like high gain, low noise, and high-speed switching.
Package
The 2SC5566-TD-E is a bipolar junction transistor (BJT) with a TO-252 package type, also known as a DPAK. This surface-mount package is commonly used for power semiconductor devices, providing efficient heat dissipation and compact size suitable for automated assembly processes.
