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AM29F010B-70EF
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FabricanteTecnologias Infineon
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Peça do Fabricante #AM29F010B-70EF
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Pacote TSOP-32
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Especificações
| Atributo | Valor |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Series | AM29F010B |
| Packaging | Tray |
| Brand | Infineon Technologies |
| Product Type | NOR Flash |
| Factory Pack Quantity | 156 |
| Subcategory | Memory & Data Storage |
| Mounting Type | SMD/SMT |
| Moisture Sensitive | Yes |
| Supply Voltage - Max | 5.5 V |
| Supply Voltage - Min | 4.5 V |
| Memory Size | 1 Mbit |
| Interface Type | Parallel |
| Active Read Current - Max | 30 mA |
| Package / Case | TSOP-32 |
| Delivery Restrictions | Mouser does not sell this product in your region. |
| Timing Type | Asynchronous |
| Data Bus Width | 8 bit |
| Architecture | Sector |
| Memory Type | NOR |
| Speed | 70 ns |
| Organisation | 128 k x 8 |
Visão Geral
Description
This device features a simple, flexible architecture that allows for rapid programming and erasing, with a typical programming time of about 20 seconds. It includes a sector-based erase capability, allowing users to erase only specific sections of memory rather than the entire chip, which enhances efficiency.
The AM29F010B-70EF is commonly used in applications such as firmware storage, BIOS chips, and other embedded systems due to its reliability and performance. It is packaged in various formats, including 32-pin DIP and PLCC, facilitating easy integration into different designs. Overall, this Flash memory is favored for its durability and speed in handling critical data.
Equivalent
Features
1. Access Speed: Offers a maximum access time of 70 ns, enabling fast read operations.
2. Architecture: Supports a byte-wide interface for flexible data handling.
3. Sector Architecture: Contains multiple sectors (8 sectors of 16KB each) allowing for efficient erasing and programming.
4. Programming Methods: Supports both standard byte programming and sector erase capabilities.
5. Data Retention: Designed for long-term data retention with a typical retention time of 10 years at 125°C.
6. Endurance: Capable of withstanding 10,000 program/erase cycles per sector.
7. Low Power Consumption: Operates with low power during read, write, and erase operations, making it suitable for battery-powered applications.
8. Compatibility: Suitable for a variety of applications including telecommunications, automotive, and industrial control.
These features make the AM29F010B-70EF a reliable choice for embedded systems requiring non-volatile memory.
Pinout
1. Address Inputs (A0-A16): 17 pins for addressing memory locations.
2. Data Inputs/Outputs (D0-D7): 8 pins for data transfer.
3. Chip Enable (CE): Activates the memory chip.
4. Output Enable (OE): Controls data output.
5. Write Enable (WE): Triggers write operations.
6. VCC: Supply voltage pin (typically 5V).
7. VSS: Ground reference pin.
8. Reset (RESET): Used to reset the device.
9. Chip Select (NC): Not connected or used for future compatibility.
This device supports various operations, including read, write, and erase, and is commonly used in embedded systems for program storage.
Manufacturer
Application
1. Consumer Electronics: Used in devices like DVD players, set-top boxes, and digital cameras for firmware storage.
2. Automotive: Employed in engine control units (ECUs) and infotainment systems for reliable data retention.
3. Telecommunications: Utilized in networking equipment and telecommunications devices for configuration storage.
4. Industrial Control: Applied in programmable logic controllers (PLCs) and automation systems for firmware and parameter storage.
5. Computing: Used in BIOS chips for computers and peripherals.
Its versatility and non-volatile characteristics make it suitable for various applications requiring data integrity.