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AM29F080B-70EF
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FabricanteTecnologias Infineon
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Peça do Fabricante #AM29F080B-70EF
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Especificações
| Atributo | Valor |
| Package / Case | TSOP-40 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Series | AM29F080B |
| Packaging | Tray |
| Brand | Infineon Technologies |
| Product Type | NOR Flash |
| Factory Pack Quantity | 120 |
| Subcategory | Memory & Data Storage |
| Mounting Type | SMD/SMT |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Moisture Sensitive | Yes |
| Supply Voltage - Max | 5.5 V |
| Supply Voltage - Min | 4.5 V |
| Memory Size | 8 Mbit |
| Interface Type | Parallel |
| Organization | 1 M x 8 |
| Active Read Current - Max | 40 mA |
| Timing Type | Asynchronous |
| Data Bus Width | 8 bit |
| Architecture | Sector |
| Memory Type | NOR |
| Speed | 70 ns |
Visão Geral
Description
The AM29F080B-70EF is a flash memory chip produced by AMD, featuring 8 megabits (1 MB) of storage capacity. It is designed for a variety of applications, including embedded systems, consumer electronics, and telecommunications. This chip utilizes a 70-nanosecond access time, ensuring rapid data retrieval.
Key features include:
- Architecture: It employs a single 8-bit data interface, allowing for easy integration into existing systems.
- Sector Erase: The memory can be erased in sectors, enabling more efficient updates and management of stored data.
- Programming Flexibility: It supports both byte-wide and word-wide programming modes.
- Endurance: The device typically offers a high number of program/erase cycles, making it suitable for applications requiring frequent updates.
- Operating Voltage: It operates at a range of 3V to 3.6V, making it compatible with low-power systems.
Overall, the AM29F080B-70EF is a reliable choice for applications needing robust, non-volatile storage solutions.
Key features include:
- Architecture: It employs a single 8-bit data interface, allowing for easy integration into existing systems.
- Sector Erase: The memory can be erased in sectors, enabling more efficient updates and management of stored data.
- Programming Flexibility: It supports both byte-wide and word-wide programming modes.
- Endurance: The device typically offers a high number of program/erase cycles, making it suitable for applications requiring frequent updates.
- Operating Voltage: It operates at a range of 3V to 3.6V, making it compatible with low-power systems.
Overall, the AM29F080B-70EF is a reliable choice for applications needing robust, non-volatile storage solutions.
Equivalent
The AM29F080B-70EF is an 8Mb flash memory chip. Equivalent products include the Intel 28F080B, Micron MT28F800, STMicroelectronics M29F080, and Winbond W29B080. Ensure compatibility in terms of pin configuration, voltage levels, and programming methods when selecting a substitute.
Features
The AM29F080B-70EF is an 8Mb (1MB) Flash memory chip manufactured by Advanced Micro Devices (AMD). Key features include:
1. Memory Organization: It consists of 8M bits organized as 1M x 8 or 512K x 16.
2. Access Time: The device offers a maximum access time of 70 ns.
3. Interface: It uses a parallel interface, compatible with standard microcontrollers and processors.
4. Programming: Supports sector erase and byte/word programming, allowing for flexible data management.
5. Endurance: The chip typically supports 100,000 program/erase cycles per sector.
6. Data Retention: Designed for at least 20 years of data retention at 125°C.
7. Power Supply: Operates on a 3.0V to 3.6V power supply, with low power consumption in standby mode.
8. Package Options: Available in various packages, including TSOP and PLCC.
These features make the AM29F080B-70EF suitable for embedded systems, consumer electronics, and other applications requiring non-volatile storage.
1. Memory Organization: It consists of 8M bits organized as 1M x 8 or 512K x 16.
2. Access Time: The device offers a maximum access time of 70 ns.
3. Interface: It uses a parallel interface, compatible with standard microcontrollers and processors.
4. Programming: Supports sector erase and byte/word programming, allowing for flexible data management.
5. Endurance: The chip typically supports 100,000 program/erase cycles per sector.
6. Data Retention: Designed for at least 20 years of data retention at 125°C.
7. Power Supply: Operates on a 3.0V to 3.6V power supply, with low power consumption in standby mode.
8. Package Options: Available in various packages, including TSOP and PLCC.
These features make the AM29F080B-70EF suitable for embedded systems, consumer electronics, and other applications requiring non-volatile storage.
Pinout
The AM29F080B-70EF is an 8-Mbit Flash memory device with a pin count of 44. Its key functions include:
- Memory Organization: 1M x 8-bit or 512K x 16-bit
- Interface: Uses a parallel interface for data input/output
- Power Supply: Operates with a Vcc of 2.7V to 3.6V
- Access Time: 70 ns access time
Pin Functions:
1. Address Pins (A0-A19): Used to select memory addresses.
2. Data Pins (DQ0-DQ7): Bi-directional data bus for reading/writing data.
3. Control Pins:
- CE# (Chip Enable): Activates the chip.
- OE# (Output Enable): Enables data output.
- WE# (Write Enable): Initiates write operations.
- RESET#: Resets the device.
4. Vcc and GND: Power supply and ground connections.
This Flash memory is typically used in applications requiring rewritable storage, such as code storage in embedded systems.
- Memory Organization: 1M x 8-bit or 512K x 16-bit
- Interface: Uses a parallel interface for data input/output
- Power Supply: Operates with a Vcc of 2.7V to 3.6V
- Access Time: 70 ns access time
Pin Functions:
1. Address Pins (A0-A19): Used to select memory addresses.
2. Data Pins (DQ0-DQ7): Bi-directional data bus for reading/writing data.
3. Control Pins:
- CE# (Chip Enable): Activates the chip.
- OE# (Output Enable): Enables data output.
- WE# (Write Enable): Initiates write operations.
- RESET#: Resets the device.
4. Vcc and GND: Power supply and ground connections.
This Flash memory is typically used in applications requiring rewritable storage, such as code storage in embedded systems.
Manufacturer
The AM29F080B-70EF is manufactured by Advanced Micro Devices, Inc. (AMD). Founded in 1969, AMD is a multinational semiconductor company based in Santa Clara, California. It designs and produces a range of technologies, including microprocessors, graphics processors, and memory solutions. AMD is well-known for its innovations in the computing and graphics sectors, competing primarily with companies like Intel and NVIDIA. The AM29F080B-70EF is a flash memory chip, specifically an 8-megabit (1 MB) NOR flash memory device, commonly used in embedded systems, telecommunications, and storage applications. AMD's products are critical in various electronic devices, from personal computers to servers and embedded systems, demonstrating the company's significant role in the global semiconductor industry.
Application
The AM29F080B-70EF is an 8-Mbit (1MB) flash memory device commonly used in applications such as embedded systems, automotive electronics, consumer electronics, and telecommunications. Its features support firmware storage, code execution, and data retention, making it suitable for devices like microcontrollers, set-top boxes, and network equipment. The chip's fast access time and reliable erase/write cycles also make it ideal for applications requiring frequent updates or reprogramming, such as industrial automation systems and medical devices. Overall, it serves as a versatile solution for non-volatile memory needs across various sectors.
Package
The AM29F080B-70EF is typically packaged in a 44-pin TSOP (Thin Small Outline Package). This package type is designed for surface mount applications, providing a compact form factor suitable for various electronic devices.
