AOD4184A

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AOD4184A

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MOSFET N-CH 40V 13A/50A TO252

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 13A (Ta), 50A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 7mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.6V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 33 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1800 pF @ 20 V
Power Dissipation (Max) 2.3W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252 (DPAK)

Visão Geral

Description

The AOD4184A is a P-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: -30V
- Current Rating: -33A (continuous)
- Low On-Resistance (RDS(on)): 8.5mΩ (max) @ VGS = -10V
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Compact Package: TO-252 (DPAK) for space-constrained designs.
It is commonly used in battery protection, power distribution, and synchronous rectification circuits. The AOD4184A offers low gate charge (Qg) and minimal conduction losses, making it ideal for high-current, low-voltage applications.
For detailed specs, refer to the datasheet.

Features

The AOD4184A is a P-channel MOSFET with the following key features:
- Voltage Rating: -40V (Drain-to-Source, VDS)
- Current Rating: -33A (Continuous Drain Current, ID)
- Low On-Resistance: 18mΩ (max) at VGS = -10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 5V/10V drive (VGS(th) ~ -2V)
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves ruggedness
- Package: TO-252 (DPAK), surface-mount
Ideal for power management, DC-DC converters, motor control, and battery protection circuits.

Pinout

The AOD4184A is a P-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G): Controls the switching operation (voltage applied here turns the MOSFET on/off).
2. Drain (D): Connects to the load (high-current terminal).
3. Source (S): Typically tied to the supply voltage.
Key Features:
- 30V drain-source voltage (VDS).
- 40A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient power handling.
Common Use: Power switching in applications like DC-DC converters, motor control, and load switches.

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