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AON6414AL
+Lista de MateriaisMOSFET N-CH 30V 13A/30A 8DFN
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FabricanteAlpha & Omega Semiconductor Inc.
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Peça do Fabricante #AON6414AL
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Ficha Técnica AON6414AL DataSheet
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Pacote VDFN-8
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Em Estoque6070
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Ta), 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 8mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 24 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1380 pF @ 15 V |
| Power Dissipation (Max) | 2.3W (Ta), 31W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (5x6) |
Visão Geral
Description
The AON6414AL is part of the company's AlphaMOS portfolio, which is known for its robustness and reliability in various operating conditions. It is often packaged in a surface-mount form, making it suitable for modern PCB designs where space and thermal management are critical considerations. The device's specifications, such as its voltage and current ratings, thermal resistance, and gate charge, make it a versatile component for use in DC-DC converters, power supply units, and other power-intensive applications. For detailed specifications and application guidance, consulting the manufacturer's datasheet is recommended.
Equivalent
1. IRFZ44N - by International Rectifier, often used in similar applications.
2. FQP30N06L - by Fairchild Semiconductor, another low voltage MOSFET.
3. NXP BUK954R8-60E - offers similar characteristics.
Always verify specific requirements like RDS(on), gate charge, and thermal resistance before substituting.
Features
1. N-Channel MOSFET: Suitable for switching and amplification tasks.
2. Low On-Resistance: Offers very low R_DS(on) for minimized conduction losses, enhancing efficiency.
3. Voltage Rating: Typically rated at 30V, making it ideal for low to medium voltage applications.
4. Current Handling: Capable of handling substantial continuous drain current, enhancing its utility in power management.
5. Package Type: Often found in a compact DFN or similar package, facilitating high-density PCB designs.
6. Fast Switching Speed: Reduces switching losses and improves overall efficiency, suitable for high-frequency applications.
7. Thermal Performance: Features good thermal characteristics for improved reliability under high power conditions.
8. ESD Protection: Enhanced electrostatic discharge protection for better durability and reliability.
These features make the AON6414AL a versatile component for use in power supply circuits, motor drives, and other applications requiring efficient power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source, thus turning the MOSFET on or off.
2. Source (S): This pin is the source of the electrons and is typically connected to the ground in an N-channel MOSFET. It serves as the reference point for the voltage applied to the gate.
3. Drain (D): This pin is where the load current flows out of the MOSFET. It is connected to the load that is being switched.
The AON6414AL is commonly used in various applications such as DC-DC converters, load switches, and power management in portable devices due to its small size and efficient performance characteristics.
Manufacturer
Application
1. Power Management: Suitable for DC-DC converters and voltage regulation in computing and consumer electronics.
2. Motor Control: Used in driving motors in industrial and automotive systems.
3. Battery Management: Helps in charging and discharging protection in portable devices and energy storage systems.
4. LED Lighting: Efficiently drives LED arrays for lighting solutions.
5. Load Switching: Acts as a switch in high-current applications for industrial equipment.
These MOSFETs are favored for their thermal efficiency and compact footprint, making them ideal for compact electronic designs.