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BAS16LT1G
+Lista de MateriaisDIODE GP 100V 200MA SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #BAS16LT1G
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Pacote SOT23-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 100 V |
| Current-AverageRectified(Io) | 200mA (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.25 V @ 150 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| ReverseRecoveryTime(trr) | 6 ns |
| Current-ReverseLeakage@Vr | 1 µA @ 100 V |
| Capacitance@VrF | 2pF @ 0V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Visão Geral
Description
Key specifications of the BAS16LT1G include a maximum repetitive reverse voltage (VRRM) of 75V, a forward current (IF) of up to 200mA, and a reverse recovery time of approximately 6 nanoseconds, making it suitable for high-frequency applications. The diode is typically housed in a compact SOT-23 package, which is ideal for surface-mounted technology (SMT) designs in space-constrained applications.
Its low leakage current and high reliability make the BAS16LT1G suitable for a variety of applications in consumer electronics, telecommunications, and automotive systems. The diode provides efficient performance in both analog and digital circuits, acting as a critical component for ensuring signal integrity and protecting circuits from voltage spikes.
Equivalent
1. NXP BAS16 - A similar high-speed, surface-mount switching diode.
2. Diodes Incorporated BAS16W - Offers comparable performance and form factor.
3. Vishay BAS16 - Another equivalent with similar voltage and current ratings.
4. Rohm UDZS16 - A high-speed switching diode with similar specifications.
5. ON Semiconductor BAS16HT1G - An alternative from the same manufacturer.
Ensure compatibility by verifying specifications such as package type, voltage, and current ratings.
Features
1. Fast Switching Speed: The diode offers quick response times, making it suitable for high-speed switching applications.
2. Small Package Size: It is housed in a compact SOT-23 surface-mount package, which is ideal for space-constrained circuit designs.
3. Low Forward Voltage Drop: Typically characterized by a low forward voltage, which contributes to energy efficiency in circuits.
4. High Reverse Breakdown Voltage: It generally features a reverse breakdown voltage of around 75V, suitable for various voltage applications.
5. Low Leakage Current: Exhibits minimal reverse current leakage, which helps in maintaining circuit integrity and efficiency.
6. General Purpose Use: Suitable for various applications, including signal processing, rectification, and voltage clamping.
These features make the BAS16LT1G a versatile component in designing electronic systems requiring reliable and efficient diode switching.
Pinout
Here's a brief description of the pin functions:
1. Pin 1 (Anode): This is the anode of the diode, where the current enters the diode. It is typically connected to the positive side of the circuit.
2. Pin 2 (N/C or Not Connected): This pin is not connected internally and often serves as a mechanical support. In some configurations, it may be used for added stability in circuit layouts.
3. Pin 3 (Cathode): This is the cathode of the diode, where the current exits. It is typically connected to the negative side of the circuit.
The BAS16LT1G is commonly used for high-speed switching applications due to its fast recovery time and low forward voltage drop, making it suitable for signal processing, rectification, and other related tasks in electronic circuits.