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BC847BLT1G
+Lista de MateriaisTRANS NPN 45V 0.1A SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #BC847BLT1G
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Pacote SOT-23-3
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Em Estoque6873
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 45 V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 2mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The BC847BLT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in electronic circuits for switching and amplification purposes. It is part of the BC847 series, known for its reliability and efficiency in low-power applications. The transistor comes in a compact SOT-23 surface-mount package, making it suitable for high-density circuit board designs.
Key specifications include a maximum collector current (Ic) of 100 mA, a maximum collector-emitter voltage (Vceo) of 45 V, and a power dissipation of 250 mW. The BC847BLT1G has a transition frequency (ft) of 100 MHz, making it suitable for RF applications. The device features a high current gain (hFE) ranging from 200 to 450, contributing to its effectiveness in amplification tasks.
Typical applications include signal amplification, signal processing, and as a switch in various consumer electronics, automotive, and industrial applications. Its ability to operate in a wide temperature range makes it versatile for different environmental conditions.
Key specifications include a maximum collector current (Ic) of 100 mA, a maximum collector-emitter voltage (Vceo) of 45 V, and a power dissipation of 250 mW. The BC847BLT1G has a transition frequency (ft) of 100 MHz, making it suitable for RF applications. The device features a high current gain (hFE) ranging from 200 to 450, contributing to its effectiveness in amplification tasks.
Typical applications include signal amplification, signal processing, and as a switch in various consumer electronics, automotive, and industrial applications. Its ability to operate in a wide temperature range makes it versatile for different environmental conditions.
Equivalent
The BC847BLT1G is a general-purpose NPN bipolar junction transistor (BJT). Equivalent products include the 2N3904, BC547, BC337, and PN2222, which also serve similar functions in amplification and switching applications. However, it's important to verify the specifications such as package type, maximum voltage, and current ratings to ensure compatibility with your specific requirements.
Features
The BC847BLT1G is a NPN Bipolar Junction Transistor (BJT) commonly used in amplification and switching applications. Key features include:
1. Package Type: It is typically housed in a SOT-23 surface-mount package, which is compact and suitable for high-density circuit designs.
2. Collector-Emitter Voltage (Vceo): It has a maximum collector-emitter voltage of 45V, making it suitable for moderate voltage applications.
3. Collector Current (Ic): The transistor can handle a continuous collector current of up to 100mA.
4. Power Dissipation: The device supports a total power dissipation of approximately 225mW.
5. Transition Frequency (fT): It features a transition frequency of around 100MHz, which reflects its ability to operate efficiently at high frequencies.
6. Low Noise: It offers low noise performance, which is critical in audio amplification and other sensitive applications.
7. High Gain: The DC current gain (hFE) typically ranges between 200 and 450, contributing to efficient signal amplification.
Overall, the BC847BLT1G is a versatile and reliable transistor for various electronic applications.
1. Package Type: It is typically housed in a SOT-23 surface-mount package, which is compact and suitable for high-density circuit designs.
2. Collector-Emitter Voltage (Vceo): It has a maximum collector-emitter voltage of 45V, making it suitable for moderate voltage applications.
3. Collector Current (Ic): The transistor can handle a continuous collector current of up to 100mA.
4. Power Dissipation: The device supports a total power dissipation of approximately 225mW.
5. Transition Frequency (fT): It features a transition frequency of around 100MHz, which reflects its ability to operate efficiently at high frequencies.
6. Low Noise: It offers low noise performance, which is critical in audio amplification and other sensitive applications.
7. High Gain: The DC current gain (hFE) typically ranges between 200 and 450, contributing to efficient signal amplification.
Overall, the BC847BLT1G is a versatile and reliable transistor for various electronic applications.
Pinout
The BC847BLT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used for switching and amplification purposes in electronic circuits. It comes in a small SOT-23 surface-mount package.
Pin Count: The BC847BLT1G has three pins.
Pin Functions:
1. Collector (C): This pin is the output side of the transistor where the load is typically connected. It handles the majority of the current flowing through the transistor.
2. Base (B): This pin is the control pin. A small current or voltage applied to the base controls the larger current flow between the collector and emitter, allowing the device to act as a switch or amplifier.
3. Emitter (E): This is the output current return path. Current flows from the collector to the emitter in normal operation mode for an NPN transistor.
The BC847BLT1G is valued for its small size and effectiveness in low-power applications.
Pin Count: The BC847BLT1G has three pins.
Pin Functions:
1. Collector (C): This pin is the output side of the transistor where the load is typically connected. It handles the majority of the current flowing through the transistor.
2. Base (B): This pin is the control pin. A small current or voltage applied to the base controls the larger current flow between the collector and emitter, allowing the device to act as a switch or amplifier.
3. Emitter (E): This is the output current return path. Current flows from the collector to the emitter in normal operation mode for an NPN transistor.
The BC847BLT1G is valued for its small size and effectiveness in low-power applications.
Manufacturer
The BC847BLT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a company that specializes in manufacturing semiconductors and provides a broad range of components like power management, signal management, logic, discrete devices, and custom devices for various applications. The company serves multiple sectors such as automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace markets. onsemi is known for its focus on energy-efficient innovations and solutions, supporting the advancement of technology in various industries.
Application
The BC847BLT1G is a general-purpose NPN bipolar junction transistor commonly used in various electronic applications. Key areas include:
1. Signal Amplification: Utilized in amplifiers to boost audio, radio, or other signal types.
2. Switching Applications: Employed in circuits to turn devices on or off, such as in relay drivers or other switching operations.
3. Oscillator Circuits: Used in generating signals for oscillators in radio frequency applications.
4. Voltage Regulation: Incorporated in circuits for voltage regulation and stabilization.
5. Digital Circuits: Applied in logic circuits and other digital applications as a basic switching element.
6. Consumer Electronics: Found in everyday electronic devices for various control and amplification needs.
Its compact size and reliable performance make it suitable for use in densely packed electronic circuits.
1. Signal Amplification: Utilized in amplifiers to boost audio, radio, or other signal types.
2. Switching Applications: Employed in circuits to turn devices on or off, such as in relay drivers or other switching operations.
3. Oscillator Circuits: Used in generating signals for oscillators in radio frequency applications.
4. Voltage Regulation: Incorporated in circuits for voltage regulation and stabilization.
5. Digital Circuits: Applied in logic circuits and other digital applications as a basic switching element.
6. Consumer Electronics: Found in everyday electronic devices for various control and amplification needs.
Its compact size and reliable performance make it suitable for use in densely packed electronic circuits.
Package
The BC847BLT1G is a general-purpose NPN bipolar junction transistor (BJT). It is supplied in a SOT-23 package, a small, surface-mount package type, commonly used in compact electronic circuits for switching and amplification purposes.
