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BSS84AK,215
+Lista de MateriaisMOSFET P-CH 50V 180MA TO236AB
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FabricanteNexperia USA Inc.
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Peça do Fabricante #BSS84AK,215
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Em Estoque4087
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Especificações
| Atributo | Valor |
| Series | TrenchMOS™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.35 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta), 1.14W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | BSS84 |
Visão Geral
Description
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of around 0.5A, and a low on-resistance (R_DS(on)) that enhances efficiency. The device typically comes in a SOT-23 package, making it compact and easy to integrate into various electronic circuits.
Common applications include power supplies, DC-DC converters, and general-purpose switching. Its performance characteristics make it a reliable choice for designers looking to optimize space and power efficiency in their designs.
For detailed electrical characteristics and thermal performance, consulting the manufacturer's datasheet is recommended to ensure compatibility with your specific application needs.
Equivalent
Features
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 60V, making it suitable for various power management applications.
2. Current Capacity: The device can handle continuous drain current (I_D) of up to 5A, allowing it to manage significant loads effectively.
3. R_DS(on): It exhibits low on-resistance (R_DS(on)), typically around 0.4 ohms at a gate-source voltage (V_GS) of 10V, which contributes to improved efficiency and reduced heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is relatively low, ensuring it can be effectively driven by logic-level signals.
5. Package: Available in a surface-mount package, facilitating compact designs in electronic circuits.
These attributes make the BSS84AK suitable for applications in switching, amplification, and power management in consumer electronics and automotive systems.
Pinout
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to this pin allows the transistor to conduct between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the transistor when it is in the "on" state. It is connected to the load in a circuit.
3. Source (S): The source pin is connected to the ground or the lower voltage side of the circuit. The current flows into this pin when the MOSFET is activated.
The BSS84AK,215 is commonly used in low-power applications for switching and amplification purposes, operating in various electronic circuits.