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BUK7Y2R0-40HX
+Lista de MateriaisMOSFET N-CH 40V 120A LFPAK56
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FabricanteNexperia USA Inc.
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Peça do Fabricante #BUK7Y2R0-40HX
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Ficha Técnica BUK7Y2R0-40HX DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | BUK7Y2 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 90.5 nC @ 10 V |
| Vgs (Max) | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5450 pF @ 25 V |
| Power Dissipation (Max) | 217W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
BUK7Y2R0-40HX is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance, enabling efficient switching and reduced power loss during operation. The device is typically used in various applications, including power supplies, motor drives, and automotive systems.
Key specifications include a maximum drain-source voltage (Vds) and high current handling capability, which allow it to manage significant loads effectively. Its fast switching speeds enhance performance in high-frequency applications, making it suitable for modern electronic designs.
The BUK7Y2R0-40HX is packaged in a TO-220 format, providing effective thermal management and ease of integration into circuits. Overall, this MOSFET is a reliable choice for engineers looking to optimize power efficiency and enhance device performance in their projects.
Key specifications include a maximum drain-source voltage (Vds) and high current handling capability, which allow it to manage significant loads effectively. Its fast switching speeds enhance performance in high-frequency applications, making it suitable for modern electronic designs.
The BUK7Y2R0-40HX is packaged in a TO-220 format, providing effective thermal management and ease of integration into circuits. Overall, this MOSFET is a reliable choice for engineers looking to optimize power efficiency and enhance device performance in their projects.
Equivalent
The BUK7Y2R0-40HX is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. When looking for substitutes, ensure they match or exceed specifications like voltage rating, current capacity, and RDS(on) for optimal performance. Always check the datasheets for specific characteristics and compatibility.
Features
The BUK7Y2R0-40HX is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Max Drain-Source Voltage (VDS): 40V, suitable for low-voltage power applications.
2. Continuous Drain Current (ID): Up to 75A, allowing for substantial current handling capabilities.
3. RDS(on): Low on-resistance (approximately 7.2 mΩ), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage (VGS(th)): Typically around 2-4V, enabling effective switching at lower gate voltages.
5. Package Type: Available in DPAK or similar packages, ensuring ease of integration into various circuits.
6. Robust Thermal Performance: Capable of handling high thermal loads, beneficial for demanding applications.
7. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switching power supplies.
These attributes make the BUK7Y2R0-40HX ideal for applications in automotive, industrial, and consumer electronics where reliability and efficiency are crucial.
1. Max Drain-Source Voltage (VDS): 40V, suitable for low-voltage power applications.
2. Continuous Drain Current (ID): Up to 75A, allowing for substantial current handling capabilities.
3. RDS(on): Low on-resistance (approximately 7.2 mΩ), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage (VGS(th)): Typically around 2-4V, enabling effective switching at lower gate voltages.
5. Package Type: Available in DPAK or similar packages, ensuring ease of integration into various circuits.
6. Robust Thermal Performance: Capable of handling high thermal loads, beneficial for demanding applications.
7. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switching power supplies.
These attributes make the BUK7Y2R0-40HX ideal for applications in automotive, industrial, and consumer electronics where reliability and efficiency are crucial.
Pinout
The BUK7Y2R0-40HX is a N-channel MOSFET that typically features a pin count of 3. The pins are generally designated as follows:
1. Gate (G): This pin controls the switching of the MOSFET on and off. Applying a voltage to the gate allows current to flow from drain to source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the 'on' state.
3. Source (S): This is the terminal connected to the ground or the negative side of the power supply in a typical application.
The BUK7Y2R0-40HX is designed for high efficiency in power management applications, featuring a low on-resistance and high-speed switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
1. Gate (G): This pin controls the switching of the MOSFET on and off. Applying a voltage to the gate allows current to flow from drain to source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the 'on' state.
3. Source (S): This is the terminal connected to the ground or the negative side of the power supply in a typical application.
The BUK7Y2R0-40HX is designed for high efficiency in power management applications, featuring a low on-resistance and high-speed switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The BUK7Y2R0-40HX is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET devices, focusing on high-volume, high-quality semiconductor solutions. The company was spun off from NXP Semiconductors in 2017 and has a strong emphasis on efficiency and reliability in its products, catering to various industries such as automotive, industrial, and consumer electronics. Nexperia is known for its commitment to innovation and quality, making it a key player in the semiconductor market.
Application
BUK7Y2R0-40HX is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: Efficiently controls power delivery in converters.
2. Motor Drives: Utilized in driving motors for industrial and automotive applications.
3. LED Lighting: Acts as a switch in LED driver circuits.
4. Battery Management Systems: Manages charging and discharging processes.
5. DC-DC Converters: Enhances efficiency in voltage regulation.
6. Audio Amplifiers: Provides robust switching for audio applications.
Its features include high efficiency, fast switching, and low on-resistance, making it suitable for various electronic circuits.
1. Switching Power Supplies: Efficiently controls power delivery in converters.
2. Motor Drives: Utilized in driving motors for industrial and automotive applications.
3. LED Lighting: Acts as a switch in LED driver circuits.
4. Battery Management Systems: Manages charging and discharging processes.
5. DC-DC Converters: Enhances efficiency in voltage regulation.
6. Audio Amplifiers: Provides robust switching for audio applications.
Its features include high efficiency, fast switching, and low on-resistance, making it suitable for various electronic circuits.
Package
The BUK7Y2R0-40HX is packaged in a TO-220 type format. This package type is commonly used for power transistors and includes features for efficient heat dissipation.
