Imagens apenas para referência
C3M0016120K
+Lista de MateriaisSICFET N-CH 1.2KV 115A TO247-4
-
FabricanteWolfspeed, Inc.
-
Peça do Fabricante #C3M0016120K
-
Ficha Técnica C3M0016120K DataSheet
-
Pacote TO-247-4
-
Em Estoque4447
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package | Tube |
| Series | C3M™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 115A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 22.3mOhm @ 75A, 15V |
| Vgs(th)(Max)@Id | 3.6V @ 23mA |
| GateCharge(Qg)(Max)@Vgs | 211 nC @ 15 V |
| Vgs(Max) | +15V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 6085 pF @ 1000 V |
| PowerDissipation(Max) | 556W (Tc) |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
Visão Geral
Description
- 1200V voltage rating and 16A continuous current capability.
- Low on-resistance (RDS(on)) for reduced conduction losses.
- Fast switching performance, ideal for power converters, EV charging, and renewable energy systems.
- High thermal conductivity due to SiC technology, enabling better heat dissipation.
This MOSFET is commonly used in industrial, automotive, and energy applications where efficiency and reliability are critical. Its robust design supports harsh environments while minimizing energy losses.
For detailed specifications, refer to the official Wolfspeed datasheet.
Equivalent
- ROHM SCT3040KR (1200V, 40mΩ)
- Infineon IMZ120R045M1 (1200V, 45mΩ)
- STMicroelectronics SCTW35N120G2V (1200V, 35mΩ)
- ON Semiconductor NTH4L020N120SC1 (1200V, 20mΩ)
Check datasheets for exact compatibility in your application.
Pinout
- Pin Count: 4 pins (standard TO-247-4L configuration).
- Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage power terminal.
3. Source (S) – Current return path.
4. Kelvin Source (Sₖ) – Separate sense terminal for improved gate drive accuracy, reducing parasitic inductance effects.
This MOSFET is optimized for high-frequency, high-efficiency applications like EV chargers, solar inverters, and industrial power supplies. The Kelvin connection enhances switching performance.
