DMN10H220LQ-7

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DMN10H220LQ-7

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MOSFET N-CH 100V 1.6A SOT23-3

  • FabricanteDiodes Incorporated

  • Peça do Fabricante #DMN10H220LQ-7

  • Em Estoque2569

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Especificações

Atributo Valor
Supplier Diodes Incorporated
Package / Case Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 1.6A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 220mOhm @ 1.6A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8.3 nC @ 10 V
Vgs(Max) ±16V
Input Capacitance(Ciss)(Max) @ Vds 401 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

Visão Geral

Description

DMN10H220LQ-7 is a surface-mount power MOSFET (N-channel, enhancement mode) in the DMN family. It’s designed as a fast-switching device for power electronics such as DC–DC converters, motor drivers, and load switches. The -7 suffix indicates a specific package/temperature variant from the manufacturer. For exact specifications (Vds, Id, Rds(on), Qgs, total gate charge, switching characteristics) and the recommended circuit applications, please consult the official datasheet from the vendor. If you share the supplier or a datasheet link, I’ll summarize the key specs and typical use cases.

Features

DMN10H220LQ-7 features (concise):
- Dual N-channel enhancement-mode MOSFETs in one package
- High-voltage class (Vds up to about 100 V)
- Very low Rds(on) per FET for high efficiency
- High current capability per FET
- Advanced trench/drive technology for fast switching
- Logic-level gate drive with low gate charge
- Suitable for synchronous buck/boost converters and motor drives
- Surface-mount, RoHS-compliant package (LQ/-7 variant indicates lead-free)

Pinout

- Pin count: 8 pins
- Function: Dual N-channel MOSFET (two N-channel enhancement-mode MOSFETs in one package, typically used as power-switching devices in DC-DC converters; often with a common drain configuration).

Manufacturer

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Application

DMN10H220LQ-7 is a dual N-channel MOSFET. Typical applications include:
- Synchronous switching power supplies (buck/boost, VRMs) and DC-DC converters
- Motor drive and controller circuits (BLDC/stepper) using high-/low-side switching
- Automotive power electronics (DC-DC, load switching, inverters)
- Power-path protection, reverse-polarity and overcurrent protection
- Renewable energy systems (solar inverters, energy-storage/bower management, UPS)
- General high-speed switching in consumer/industrial electronics
Concisely, it’s used wherever efficient, compact dual MOSFET switching is required.

Package

Package type: 7‑pin LQFN (leadless DFN) style package.

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