FCB070N65S3

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FCB070N65S3

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MOSFET N-CH 650V 44A D2PAK

  • Fabricanteonsemi

  • Peça do Fabricante #FCB070N65S3

  • Pacote TO-263

  • Em Estoque7325

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series SuperFET® III
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 44A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 70mOhm @ 22A, 10V
Vgs(th)(Max) @ Id 4.5V @ 4.4mA
Gate Charge(Qg)(Max) @ Vgs 78 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 3090 pF @ 400 V
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Visão Geral

Description

The FCB070N65S3 is a 650V, 70A N-channel SuperFET III MOSFET from ON Semiconductor, designed for high-efficiency power applications.
### Key Features:
- Low RDS(on): 47mΩ (typ.) for reduced conduction losses.
- Fast Switching: Optimized for high-frequency operations (e.g., SMPS, motor drives).
- Robust Design: Avalanche-rated, with improved thermal performance.
- Low Gate Charge (Qg): Enhances switching efficiency.
### Applications:
- Switched-Mode Power Supplies (SMPS)
- DC-DC Converters
- Motor Control & Inverters
- Solar & Industrial Power Systems
### Package:
- TO-263 (D2PAK) for efficient heat dissipation.
This MOSFET balances high current handling, low losses, and reliability, making it ideal for demanding power electronics.

Equivalent

Equivalent products to the FCB070N65S3 (650V, 70A IGBT) include:
- Infineon: IKW75N65ES5
- STMicroelectronics: STGW75H65DFB
- ON Semiconductor: FGH75N65SMD
- Mitsubishi: CM75DY-24H
These alternatives offer similar voltage, current ratings, and performance. Always verify datasheets for exact compatibility.

Features

The FCB070N65S3 is a 650V, 70A N-channel SuperFET III MOSFET from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Low RDS(on): 7.0 mΩ (typ.) at VGS = 10V, reducing conduction losses.
- Fast switching: Optimized gate charge (QG = 120nC) for high-frequency operation.
- Avalanche-rated: Robust against inductive load spikes.
- Low gate drive: VGS(th) = 3V (typ.), compatible with logic-level signals.
- Low Qrr: Improved reverse recovery for reduced switching losses.
- TO-247 package: High power dissipation capability.
Ideal for SMPS, motor drives, and inverters requiring high efficiency and reliability.

Manufacturer

The FCB070N65S3 is a 650V, 70A N-channel MOSFET manufactured by Infineon Technologies, a leading German semiconductor company.
Infineon specializes in power semiconductors, microcontrollers, and security solutions, serving industries like automotive, industrial, and consumer electronics. Known for innovation in energy efficiency and reliability, Infineon is a key player in high-performance power devices.
The FCB070N65S3 is part of their CoolMOS™ C7 series, optimized for high efficiency in power conversion applications.

Application

The FCB070N65S3 is a 650V, 70A N-channel MOSFET from Infineon, designed for high-efficiency power applications. Key application areas include:
1. Switched-Mode Power Supplies (SMPS) – Used in AC/DC and DC/DC converters.
2. Motor Control – Ideal for industrial and automotive motor drives.
3. Solar Inverters – Enhances efficiency in renewable energy systems.
4. Uninterruptible Power Supplies (UPS) – Ensures reliable power backup.
5. Electric Vehicle (EV) Charging – Supports fast and efficient charging solutions.
Its low on-resistance (RDS(on)) and fast switching make it suitable for high-power, high-frequency applications.

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