FDB3632

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MOSFET N-CH 100V 12A/80A D2PAK

  • Fabricanteonsemi

  • Peça do Fabricante #FDB3632

  • Pacote D2PAK-3

  • Em Estoque4783

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 12A (Ta), 80A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 9mOhm @ 80A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 6000 pF @ 25 V
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Visão Geral

Equivalent

Equivalent products to the FDB3632 (a 30V N-channel MOSFET) include:
- IRLML0030 (Infineon)
- DMN3010LSD (Diodes Inc.)
- BSS138 (onsemi, lower current rating)
- SI2302 (Vishay)
Check datasheets for exact specs like current (Id), Rds(on), and package compatibility. For alternatives, search platforms like Mouser or Digi-Key using parametric filters.

Features

The FDB3632 is a N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 98A (continuous)
- Low On-Resistance (RDS(on)): 3.2 mΩ (max at VGS=10V)
- Fast Switching: Suitable for high-efficiency power applications
- Package: TO-263 (D2PAK), offering good thermal performance
- Applications: Power management, motor control, DC-DC converters, and load switching
It is designed for high-current, low-loss performance in demanding circuits.

Package

The FDB3632 is a Schottky barrier diode typically available in a TO-263AB (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance and a compact footprint. It features three leads and a metal tab for heat dissipation. Suitable for automotive and industrial uses, it ensures reliable operation under high-current conditions.

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