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FDMC86262P
+Lista de MateriaisMOSFET P-CH 150V 2A/8.4A 8MLP
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Fabricanteonsemi
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Peça do Fabricante #FDMC86262P
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Pacote WDFN-8
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Em Estoque3095
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 2A (Ta), 8.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 307mOhm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 885 pF @ 75 V |
| Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-MLP (3.3x3.3) |
Visão Geral
Description
Key features of the FDMC86262P include:
- Low On-Resistance: Facilitates efficient current flow with minimal energy loss.
- High-Speed Switching: Optimizes performance for fast electronic applications.
- Thermal Performance: Designed to operate effectively under varying temperature conditions, making it suitable for demanding applications.
Typical uses of the FDMC86262P include power supply circuits, motor drives, and various other applications where efficient power conversion and control are required. Its compact packaging and robust design make it a versatile component in modern electronic designs.
Equivalent
1. IRF5305 - by Infineon Technologies.
2. FDD8632 - by ON Semiconductor.
3. SI4435DY - by Vishay Siliconix.
4. NTMS4904NR2G - by ON Semiconductor.
Ensure to cross-reference the datasheets for exact matching specifications such as Rds(on), Vgs(th), and package type when selecting an equivalent.
Features
1. N-Channel MOSFET: This device operates in N-channel mode.
2. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 38A.
3. Low On-Resistance: The MOSFET offers a low R_DS(on) value, typically around 3.2mΩ, minimizing power loss and enhancing efficiency.
4. Gate Threshold Voltage: It features a gate threshold voltage (V_GS(th)) range of 1V to 3V, facilitating easy drive by low-voltage gate signals.
5. Package Type: The device is available in a Power33 package, which aids in thermal management and compact designs.
6. Applications: Ideal for applications such as DC-DC converters, synchronous rectification, and load switching.
These features make the FDMC86262P a versatile choice for designers looking to optimize performance in electronic circuits.
Pinout
Here is a brief overview of its pin configurations:
- Pins 1, 2, 3: Source (S)
- Pin 4: Gate (G)
- Pins 5, 6, 7, 8: Drain (D)
Functionally, this MOSFET is used to control power delivery with high efficiency by acting as an electronic switch. The source pin is connected to the ground or the lower potential, the gate pin is used to control the MOSFET state (on or off), and the drain pin is connected to the load or the power supply. The device is optimized for applications requiring low on-state resistance, fast switching speeds, and improved thermal performance.
Manufacturer
Application
1. Power Management: Used in DC-DC converters, load switches, and power distribution systems for efficient power management.
2. Consumer Electronics: Used in smartphones, tablets, and laptops for battery management and power control.
3. Automotive: Applied in automotive control circuits for switching and power regulation.
4. Industrial Equipment: Used in motor control systems and automation equipment for efficient power handling.
5. Telecommunications: Employed in power supply units for network and communication devices.
Its low on-resistance and high efficiency make it suitable for applications requiring reliable switching and power control.