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MOSFET N-CH 250V 51A TO220-3
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Fabricanteonsemi
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Peça do Fabricante #FDP51N25
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Pacote TO-220-3
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Em Estoque5673
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Especificações
| Atributo | Valor |
| Package / Case | Bulk,Tube |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain(Id) @ 25°C | 51A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 25.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3410 pF @ 25 V |
| Power Dissipation (Max) | 320W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Visão Geral
Description
The FDP51N25 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching applications. It features a low on-state resistance and is capable of handling high current and voltage levels, making it suitable for power management and conversion tasks. This particular MOSFET is designed for use in environments where efficiency and reliability are paramount, such as in power supplies, motor controls, and battery-operated devices.
Key specifications of the FDP51N25 typically include a drain-to-source voltage (V_DS) of 250V, and a continuous drain current (I_D) handling capability which can vary based on the specific package and cooling conditions. It is constructed to provide high-speed switching and is known for its robustness and efficient thermal performance. As with most MOSFETs, proper consideration of thermal management and gate drive voltage is essential to ensure optimal performance and longevity in application circuits.
Key specifications of the FDP51N25 typically include a drain-to-source voltage (V_DS) of 250V, and a continuous drain current (I_D) handling capability which can vary based on the specific package and cooling conditions. It is constructed to provide high-speed switching and is known for its robustness and efficient thermal performance. As with most MOSFETs, proper consideration of thermal management and gate drive voltage is essential to ensure optimal performance and longevity in application circuits.
Equivalent
The FDP51N25 is a N-channel MOSFET. Equivalent products include: IRFP250N by Infineon, FQA50N25 by ON Semiconductor, STP25N25 by STMicroelectronics, and IXFP50N25 by IXYS. Ensure to check the specifications like current, voltage ratings, and package compatibility before substituting to confirm that they meet your application needs.
Features
The FDP51N25 is an N-channel MOSFET designed for high-efficiency power applications. Here are its key features:
1. Voltage & Current Ratings: It can handle a maximum drain-source voltage (V_ds) of 250V and a continuous drain current (I_d) of 51A.
2. R_DS(on): The MOSFET has a low on-state resistance of approximately 55 milliohms, which enhances its efficiency by minimizing power loss.
3. Gate Threshold Voltage: Typically, the gate-source threshold voltage (V_gs(th)) ranges from 2V to 4V, ensuring it turns on effectively at standard logic levels.
4. Package Type: The device is available in a TO-220 package, offering good thermal performance for high-power applications.
5. Thermal Resistance: It features a low thermal resistance junction-to-case, aiding in effective heat dissipation.
6. Applications: Suitable for switching applications, power supplies, and motor controls due to its high-speed switching capabilities and robustness.
These features make the FDP51N25 an optimal choice for various power-related applications requiring efficient and reliable performance.
1. Voltage & Current Ratings: It can handle a maximum drain-source voltage (V_ds) of 250V and a continuous drain current (I_d) of 51A.
2. R_DS(on): The MOSFET has a low on-state resistance of approximately 55 milliohms, which enhances its efficiency by minimizing power loss.
3. Gate Threshold Voltage: Typically, the gate-source threshold voltage (V_gs(th)) ranges from 2V to 4V, ensuring it turns on effectively at standard logic levels.
4. Package Type: The device is available in a TO-220 package, offering good thermal performance for high-power applications.
5. Thermal Resistance: It features a low thermal resistance junction-to-case, aiding in effective heat dissipation.
6. Applications: Suitable for switching applications, power supplies, and motor controls due to its high-speed switching capabilities and robustness.
These features make the FDP51N25 an optimal choice for various power-related applications requiring efficient and reliable performance.
Pinout
The FDP51N25 is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It comes in a TO-220 package, which typically has three pins.
Here are the pin functions:
1. Gate (G): This is the input pin for the MOSFET, which controls the opening and closing of the channel between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current enters the MOSFET. The flow of current between the drain and source is regulated by the gate voltage.
3. Source (S): This is the pin through which current exits the MOSFET. It is typically connected to ground or a negative voltage in N-channel MOSFET applications.
These MOSFETs are often used in power management applications due to their capability of handling significant power levels. Always refer to the manufacturer’s datasheet for precise specifications and characteristics.
Here are the pin functions:
1. Gate (G): This is the input pin for the MOSFET, which controls the opening and closing of the channel between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current enters the MOSFET. The flow of current between the drain and source is regulated by the gate voltage.
3. Source (S): This is the pin through which current exits the MOSFET. It is typically connected to ground or a negative voltage in N-channel MOSFET applications.
These MOSFETs are often used in power management applications due to their capability of handling significant power levels. Always refer to the manufacturer’s datasheet for precise specifications and characteristics.
Manufacturer
The FDP51N25 is a type of power MOSFET, and it is manufactured by ON Semiconductor. ON Semiconductor is a leading semiconductor supplier that focuses on energy-efficient electronics. The company provides a wide range of products, including power and signal management, logic, discrete, and custom devices for various applications across automotive, industrial, cloud power, and Internet of Things (IoT) markets. Known for their emphasis on energy efficiency and sustainability, ON Semiconductor's products are integral in enhancing performance and reducing energy consumption in electronic systems.
Application
The FDP51N25 is an N-channel MOSFET commonly used in various electronic applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Power Supply Units (PSUs): Used for switching and regulating power in computer and electronics power supplies.
2. Motor Control: Ideal for controlling motors in industrial and consumer electronics due to its ability to handle high current and voltage.
3. DC-DC Converters: Utilized in step-up or step-down converters for efficient power management.
4. Inverters: Employed in inverter circuits for converting DC to AC power.
5. Automotive Systems: Suitable for use in automotive electronics for power management and control systems.
These features make it a versatile component in power electronics.
1. Power Supply Units (PSUs): Used for switching and regulating power in computer and electronics power supplies.
2. Motor Control: Ideal for controlling motors in industrial and consumer electronics due to its ability to handle high current and voltage.
3. DC-DC Converters: Utilized in step-up or step-down converters for efficient power management.
4. Inverters: Employed in inverter circuits for converting DC to AC power.
5. Automotive Systems: Suitable for use in automotive electronics for power management and control systems.
These features make it a versatile component in power electronics.
Package
The FDP51N25 is a power MOSFET with a TO-220 package type.
