FDS8958A

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FDS8958A

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POWER FIELD-EFFECT TRANSISTOR, 7

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Especificações

Atributo Valor
Package Bulk
Series PowerTrench®
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 7A, 5A
RdsOn(Max)@IdVgs 28mOhm @ 7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 16nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 575pF @ 15V
Power-Max 900mW
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Visão Geral

Features

The FDS8958A is a dual N-channel PowerTrench MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 9.7A (per channel)
- Low On-Resistance (RDS(on)): 28mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1V)
- PowerTrench® Technology: Enhances thermal performance and reduces conduction losses
- Dual MOSFET in SO-8 Package: Space-saving design
- Low Gate Charge (Qg): Improves switching efficiency
Ideal for DC-DC converters, motor control, and power management in compact designs.

Application

The FDS8958A is a dual N-channel MOSFET used in various power management and switching applications. Key areas include:
1. Power Supplies – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits, brushed motor drivers.
3. Load Switching – Battery protection, power distribution.
4. Portable Devices – Smartphones, tablets (power efficiency).
5. Automotive Systems – LED drivers, infotainment power control.
Its low on-resistance and high efficiency make it suitable for compact, high-performance designs.

Package

The FDS8958A is a dual N-channel PowerTrench MOSFET in an SO-8 (SOIC-8) package. It features a compact surface-mount design, suitable for high-efficiency power management applications. The package is industry-standard, ensuring compatibility with automated assembly processes. Key characteristics include low on-resistance and high-speed switching.

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