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FDS9945
+Lista de MateriaisSMALL SIGNAL FIELD-EFFECT TRANSI
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FabricanteSemiconductor Fairchild
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Peça do Fabricante #FDS9945
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Ficha Técnica FDS9945 DataSheet
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Pacote SOIC-8
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Especificações
| Atributo | Valor |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Ta) |
| RdsOn(Max)@IdVgs | 100mOhm @ 3.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 420pF @ 30V |
| Power-Max | 1W (Ta) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Visão Geral
Description
Key features of the FDS9945 include its low gate charge and low on-state resistance, which contribute to efficient energy use and minimal heat generation in operation. The MOSFET is housed in a surface-mount package, facilitating compact circuit designs and efficient thermal management. It is widely used in consumer electronics, automotive systems, and industrial applications, where reliability and efficiency are crucial.
Overall, the FDS9945 is valued for its performance in handling moderate power levels efficiently, making it a popular choice in a variety of power control and conversion applications.
Equivalent
Features
1. Low On-Resistance: The FDS9945 has low on-resistance, which minimizes power loss and enhances efficiency in switching applications.
2. High Current Capability: It can handle significant current levels, making it suitable for various power applications.
3. Fast Switching Speed: The transistor is designed for rapid switching, which is beneficial in high-frequency applications.
4. Thermal Performance: The device offers good thermal performance, helping to maintain stability and reliability under varying thermal conditions.
5. Compact Package: Typically available in a small form factor, it allows for efficient use of board space.
6. Logic Level Gate Drive: The MOSFET can be driven directly by logic level signals, simplifying its integration into digital circuits.
These features make the FDS9945 suitable for use in DC-DC converters, load switches, and other electronic power control applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This pin is where the current flows into the MOSFET. The drain is connected to the load that the MOSFET is controlling.
3. Source (S): This pin is where the current exits the MOSFET. It is usually connected to ground or the negative side of the power supply in an N-channel MOSFET configuration.
The other pins in the package might be internally connected to these main terminals or may not be used. The FDS9945 is known for its low on-resistance and efficient switching capabilities, making it suitable for power management applications.