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FGH20N60SFDTU
+Lista de MateriaisIGBT FIELD STOP 600V 40A TO247
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Fabricanteonsemi
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Peça do Fabricante #FGH20N60SFDTU
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Ficha Técnica FGH20N60SFDTU DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
| Power - Max | 165 W |
| Switching Energy | 370µJ (on), 160µJ (off) |
| Input Type | Standard |
| Gate Charge | 65 nC |
| Td (on / off) @ 25°C | 13ns/90ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 34 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Base Product Number | FGH20 |
Visão Geral
Description
The FGH20N60SFDTU is housed in a TO-220 package, facilitating effective heat dissipation, essential for maintaining performance under high load conditions. Its fast switching capabilities allow for reduced switching losses, making it ideal for high-frequency applications.
Additionally, the MOSFET's gate threshold voltage is optimized for compatibility with various drive circuits, ensuring reliable operation in diverse environments. Overall, the FGH20N60SFDTU combines robust performance characteristics with efficiency, making it a popular choice in industrial and consumer electronics applications.
Equivalent
Features
1. Voltage Rating: Up to 600V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current of 20A, allowing for substantial load handling.
3. Low On-Resistance: With a typical Rds(on) of around 0.25 ohms, it minimizes conduction losses.
4. Fast Switching Speed: Designed for efficient switching, enhancing performance in power conversion.
5. Thermal Resistance: Offers low thermal resistance, ensuring effective heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat management.
7. Robustness: Provides reliable operation in harsh environments, suitable for industrial and automotive applications.
These features make the FGH20N60SFDTU ideal for use in power supplies, motor drives, and other high-efficiency applications.
Pinout
Pin Configuration:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or the negative side of the power supply.
Functions:
- The Gate pin receives voltage to turn the MOSFET on (allowing current to flow from Drain to Source) or off (stopping the current flow).
- The Drain pin connects to the load, facilitating the flow of current when the MOSFET is turned on.
- The Source pin is connected to the ground, allowing the current to complete its circuit.
Overall, this MOSFET is designed for high voltage and current applications, making it suitable for switching and amplification tasks in power electronics.
Manufacturer
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through a combination of organic growth and acquisitions. It focuses on sustainability and energy efficiency, providing solutions that help reduce energy consumption and improve performance in electronic systems. The company is known for its commitment to innovation and technology advancement, catering to the increasing demand for high-quality semiconductor products in a rapidly evolving market.
Application
1. Switching Power Supplies: For voltage regulation and conversion.
2. Inverters: Utilized in renewable energy systems like solar inverters.
3. Motor Drives: In control circuits for electric motors.
4. Induction Heating: As part of circuits for heating applications.
5. Lighting Control: In LED drivers and dimmers.
6. Power Management: In automotive and industrial applications for efficient energy conversion.
Overall, it is favored for its high voltage and current handling capabilities.