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FGH75T65UPD
+Lista de MateriaisIGBT 650V 150A 375W TO-247AB
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Fabricanteonsemi
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Peça do Fabricante #FGH75T65UPD
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Pacote TO-247
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Especificações
| Atributo | Valor |
| Package / Case | Bulk |
| Part Status | Not For New Designs |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 650 V |
| Current - Collector(Ic)(Max) | 150 A |
| Current - Collector Pulsed(Icm) | 225 A |
| Vce(on)(Max) @ Vge Ic | 2.3V @ 15V, 75A |
| Power - Max | 375 W |
| Switching Energy | 2.85mJ (on), 1.2mJ (off) |
| Input Type | Standard |
| Gate Charge | 385 nC |
| Td(on / off) @ 25°C | 32ns/166ns |
| Test Condition | 400V, 75A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 85 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
Visão Geral
Description
The FGH75T65UPD is a type of Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion. It combines the fast-switching features of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with the high current and low saturation voltage capabilities of a bipolar transistor. This makes it ideal for applications requiring high power and efficiency, such as motor drives, induction heating, and power inverters.
Key features of the FGH75T65UPD include its high current capability, low on-state voltage drop, and robust short-circuit withstand capacity. It typically operates at a collector-emitter voltage of 650V and a current rating of 75A. The device is designed to minimize conduction and switching losses, thus improving overall system performance and reliability.
Its fast switching speed and low loss characteristics make it suitable for both hard and soft switching applications. The compact design also aids in reducing the size and weight of electronic devices. This IGBT is an excellent choice for engineers looking to optimize efficiency in high-power applications.
Key features of the FGH75T65UPD include its high current capability, low on-state voltage drop, and robust short-circuit withstand capacity. It typically operates at a collector-emitter voltage of 650V and a current rating of 75A. The device is designed to minimize conduction and switching losses, thus improving overall system performance and reliability.
Its fast switching speed and low loss characteristics make it suitable for both hard and soft switching applications. The compact design also aids in reducing the size and weight of electronic devices. This IGBT is an excellent choice for engineers looking to optimize efficiency in high-power applications.
Equivalent
The FGH75T65UPD is an IGBT designed for high-efficiency power switching applications. Equivalent products could include IGBTs with similar voltage, current ratings, and switching characteristics. Examples are the Infineon IKW75N65ES5, Mitsubishi CM75DX-24T, or Toshiba GT50JR22. Always check specific voltage, current ratings, and package compatibility when selecting an equivalent. For accurate replacements, consult datasheets or manufacturer cross-reference tools.
Pinout
The FGH75T65UPD is an IGBT (Insulated Gate Bipolar Transistor) module. It typically features a three-pin configuration: the collector, gate, and emitter.
1. Collector (C): This is the terminal through which the main current flows into the IGBT. It is connected to the high-voltage side of the circuit.
2. Gate (G): This terminal controls the IGBT’s operation. A voltage applied to the gate controls the current flow between the collector and emitter.
3. Emitter (E): The current flows out through this terminal, connected to the low-voltage side of the circuit.
The FGH75T65UPD is designed for high-efficiency and high-speed switching applications. It is often used in power electronics, such as inverters, motor drivers, and power supplies, due to its ability to handle high voltages and currents efficiently.
1. Collector (C): This is the terminal through which the main current flows into the IGBT. It is connected to the high-voltage side of the circuit.
2. Gate (G): This terminal controls the IGBT’s operation. A voltage applied to the gate controls the current flow between the collector and emitter.
3. Emitter (E): The current flows out through this terminal, connected to the low-voltage side of the circuit.
The FGH75T65UPD is designed for high-efficiency and high-speed switching applications. It is often used in power electronics, such as inverters, motor drivers, and power supplies, due to its ability to handle high voltages and currents efficiently.
Manufacturer
The FGH75T65UPD is a product manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor supplier that focuses on intelligent power and sensing technologies. The company provides a broad range of products and solutions for various applications, including automotive, industrial, cloud power, and IoT. ON Semiconductor is known for its innovation in energy-efficient electronics and plays a significant role in the development of technologies that enable smart and sustainable solutions.
Application
The FGH75T65UPD is an IGBT (Insulated Gate Bipolar Transistor) used in high-power applications. Key application areas include:
1. Motor Drives: Efficient control in industrial and commercial motor drive systems.
2. Renewable Energy: Inverters for solar and wind energy systems.
3. Power Supplies: High-frequency switching power supplies.
4. Welding Equipment: Control and regulation in welding machines.
5. Uninterruptible Power Supplies (UPS): Reliable power backup systems.
6. Electric Vehicles: Power management and motor control in EVs.
7. HVAC Systems: Efficient operation in heating, ventilation, and air conditioning systems.
These areas benefit from the IGBT's high efficiency, fast switching, and robust performance.
1. Motor Drives: Efficient control in industrial and commercial motor drive systems.
2. Renewable Energy: Inverters for solar and wind energy systems.
3. Power Supplies: High-frequency switching power supplies.
4. Welding Equipment: Control and regulation in welding machines.
5. Uninterruptible Power Supplies (UPS): Reliable power backup systems.
6. Electric Vehicles: Power management and motor control in EVs.
7. HVAC Systems: Efficient operation in heating, ventilation, and air conditioning systems.
These areas benefit from the IGBT's high efficiency, fast switching, and robust performance.
Package
The FGH75T65UPD is an IGBT (Insulated Gate Bipolar Transistor) with a TO-247 package type. The TO-247 is a through-hole package often used for high-power semiconductor devices, providing efficient heat dissipation and ease of mounting on heat sinks.
