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FQB47P06TM-AM002
+Lista de MateriaisMOSFET P-CH 60V 47A D2PAK
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Fabricanteonsemi
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Peça do Fabricante #FQB47P06TM-AM002
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Pacote TO-263-3
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 47A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 26mOhm @ 23.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 3600 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 160W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Visão Geral
Description
The "FQB" prefix typically denotes a specific product line or manufacturer, while the alphanumeric code usually provides details about the specific characteristics of the MOSFET, such as voltage and current ratings. The "P" in the model number might indicate that it is a P-channel MOSFET, which means it conducts when a negative voltage is applied to the gate relative to the source. The device is likely packaged for surface-mount technology, which is common in modern electronic assembly for compact and efficient circuit designs. As specifications can vary, consulting the datasheet for precise technical details is recommended.
Equivalent
- IRF9540N
- NDP6020P
- FQP47P06
- STP16PF06
Ensure to compare parameters like V_DS, I_D, R_DS(on), and package type when selecting an equivalent. Always verify the datasheet for precise compatibility.
Features
1. P-Channel Type: Suitable for switching applications that require a P-channel configuration.
2. Voltage and Current Ratings: Typically offers a drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) capacity, which should be checked in the datasheet for precise values.
3. Low On-Resistance: Features low R_DS(on) for reduced power loss and improved efficiency.
4. Fast Switching: Designed for high-speed switching to enhance performance in circuits.
5. Thermal Management: Comes with efficient thermal characteristics to handle power dissipation effectively.
6. Package: Usually available in a standard package size that facilitates easy integration into PCBs.
These features make it suitable for applications in power management, load switching, and various electronic circuits where efficient switching and low power loss are critical. Always refer to the specific datasheet for detailed specifications and ratings.
Pinout
1. Gate (G): This pin controls the MOSFET's conduction state. Applying a voltage to the gate allows current to flow between the source and the drain.
2. Drain (D): This is the main current-carrying terminal, through which the load current flows when the MOSFET is in the "on" state.
3. Source (S): This is the terminal through which the current enters the MOSFET. For P-channel MOSFETs, the source is typically connected to the more positive voltage in the circuit.
Additionally, the metal tab or the back of the package is often connected to the drain and can be used for heat dissipation. The FQB47P06TM-AM002 is characterized by its ability to handle high power and voltage, typical for power MOSFETs.