FQD12N20LTM

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FQD12N20LTM

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MOSFET N-CH 200V 9A DPAK

  • Fabricanteonsemi

  • Peça do Fabricante #FQD12N20LTM

  • Pacote TO-252

  • Em Estoque4992

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Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 280mOhm @ 4.5A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1080 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 55W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Visão Geral

Description

The FQD12N20LTM is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 0.28Ω (max)
- Fast Switching: Optimized for high-speed operation
- Package: TO-252 (DPAK), suitable for surface-mount designs
It is commonly used in switching power supplies, motor control, and DC-DC converters, offering low conduction losses and robust performance. The device includes built-in protection against ESD and is RoHS compliant.
For detailed specifications, refer to the datasheet from ON Semiconductor.

Equivalent

Equivalent products to the FQD12N20LTM (200V, 12A N-channel MOSFET) include:
- IRF540N (100V, 33A) – Higher current but lower voltage.
- STP16NF20 (200V, 16A) – Slightly higher current rating.
- IRF640 (200V, 18A) – Higher current, similar voltage.
- FQP12N20 (200V, 12A) – Nearly identical specs.
Check datasheets for exact compatibility in your application.

Features

The FQD12N20LTM is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 0.28Ω (max at VGS=10V)
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improved ruggedness
- Package: TO-252 (DPAK), surface-mount design
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced)
Ideal for power switching in DC-DC converters, motor control, and other high-efficiency applications.

Pinout

The FQD12N20LTM is an N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G): Controls the switching operation (voltage applied here turns the MOSFET on/off).
2. Drain (D): Connects to the load (high-voltage/high-current side).
3. Source (S): Ground reference (connected to the circuit ground).
Key Specifications:
- Voltage Rating: 200V
- Current Rating: 12A
- Low On-Resistance (RDS(on)): Optimized for efficiency in power applications.
Typical Use: Power switching (e.g., DC-DC converters, motor control).
Package is surface-mount (DPAK), with the tab acting as the Drain pin for heat dissipation.

Package

The FQD12N20LTM is a PowerTrench MOSFET from ON Semiconductor, available in a TO-252 (DPAK) surface-mount package. This package type is compact, suitable for high-power applications, and features a thermally efficient design with an exposed pad for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-current circuits.

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