FQD1N60CTM

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FQD1N60CTM

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MOSFET N-CH 600V 1A DPAK

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 1A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 11.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 6.2 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 170 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Visão Geral

Description

The FQD1N60CTM is an N-channel MOSFET transistor designed for high-efficiency switching applications. It is part of Fairchild Semiconductor's lineup of power MOSFETs, known for their reliability and performance in electronic circuits. The device features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 1A, making it suitable for high-voltage applications.
Key characteristics of the FQD1N60CTM include a low on-resistance, which minimizes power loss and heat generation during operation, enhancing energy efficiency. It also has a fast switching speed, allowing it to handle rapid changes in load and signal conditions. This MOSFET is often used in power supply units, lighting applications, and motor control circuits due to its capability to handle high voltages and currents effectively.
The FQD1N60CTM is typically packaged in a TO-251 or TO-252, providing good thermal performance and ease of integration into various circuit designs. Its robustness and performance make it a popular choice for engineers working on power conversion and management solutions.

Equivalent

The FQD1N60CTM is a MOSFET from ON Semiconductor. Equivalent products may include:
1. STMicroelectronics STP1NK60Z
2. Vishay SILICONIX SiHF1N60E
3. Infineon IPD60R1K4C6
4. Fairchild FDP1N60NZ
Ensure compatibility by checking the specific electrical characteristics and package types, as equivalents might differ slightly in ratings or features.

Features

The FQD1N60CTM is a N-channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 1A, making it suitable for high-voltage applications. The MOSFET features a low on-resistance (R_DS(on)), which helps in reducing power loss and enhancing efficiency. It is built with advanced silicon technology that provides fast switching speeds, contributing to improved performance in switching applications. The device is typically housed in a compact TO-252 package, which aids in effective thermal management. This MOSFET is commonly used in power supply circuits, motor controls, and other applications requiring efficient voltage regulation and switching. Its robust construction ensures reliability and durability under varying operational conditions.

Pinout

The FQD1N60CTM is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching applications. It typically comes in a TO-252 package, which has three pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a positive voltage to the gate relative to the source turns the MOSFET on, allowing current to flow between the drain and source.
2. Drain (D): Current flows into this pin when the MOSFET is in the "on" state. It is connected to the load in a typical application circuit.
3. Source (S): Current flows out of this pin. It is typically connected to ground or to the return path of the circuit.
The FQD1N60CTM is designed to handle high voltages and currents, making it suitable for applications involving power conversion, motor control, and power management.

Manufacturer

The FQD1N60CTM is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a global semiconductor supplier company that specializes in energy-efficient electronics. They provide a variety of semiconductor solutions, including discrete and integrated semiconductor products, for applications in automotive, industrial, cloud power, and IoT sectors, among others. The company focuses on providing solutions that help reduce energy consumption and improve performance in electronic devices.

Application

The FQD1N60CTM is a N-channel MOSFET, and its application areas include:
1. Power Supplies: Used in switching power supplies for efficient energy conversion.
2. Motor Drives: Functions in motor control circuits for improved speed and torque regulation.
3. Lighting: Utilized in electronic ballasts for high-efficiency lighting solutions.
4. Battery Chargers: Aids in controlling charging processes to enhance battery life.
5. Inverters: Used in DC-AC inverter circuits for renewable energy systems.
6. Telecommunications: Supports signal switching and amplification in communication equipment.
These applications benefit from the MOSFET's fast switching speeds and high efficiency.

Package

The FQD1N60CTM is a MOSFET with a TO-252 package type, often referred to as a DPAK.

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