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FQD1N60CTM
+Lista de MateriaisMOSFET N-CH 600V 1A DPAK
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Fabricanteonsemi
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Peça do Fabricante #FQD1N60CTM
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Ficha Técnica FQD1N60CTM DataSheet
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Pacote DPAK-3
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 11.5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 170 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Visão Geral
Description
Key characteristics of the FQD1N60CTM include a low on-resistance, which minimizes power loss and heat generation during operation, enhancing energy efficiency. It also has a fast switching speed, allowing it to handle rapid changes in load and signal conditions. This MOSFET is often used in power supply units, lighting applications, and motor control circuits due to its capability to handle high voltages and currents effectively.
The FQD1N60CTM is typically packaged in a TO-251 or TO-252, providing good thermal performance and ease of integration into various circuit designs. Its robustness and performance make it a popular choice for engineers working on power conversion and management solutions.
Equivalent
1. STMicroelectronics STP1NK60Z
2. Vishay SILICONIX SiHF1N60E
3. Infineon IPD60R1K4C6
4. Fairchild FDP1N60NZ
Ensure compatibility by checking the specific electrical characteristics and package types, as equivalents might differ slightly in ratings or features.
Features
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a positive voltage to the gate relative to the source turns the MOSFET on, allowing current to flow between the drain and source.
2. Drain (D): Current flows into this pin when the MOSFET is in the "on" state. It is connected to the load in a typical application circuit.
3. Source (S): Current flows out of this pin. It is typically connected to ground or to the return path of the circuit.
The FQD1N60CTM is designed to handle high voltages and currents, making it suitable for applications involving power conversion, motor control, and power management.
Manufacturer
Application
1. Power Supplies: Used in switching power supplies for efficient energy conversion.
2. Motor Drives: Functions in motor control circuits for improved speed and torque regulation.
3. Lighting: Utilized in electronic ballasts for high-efficiency lighting solutions.
4. Battery Chargers: Aids in controlling charging processes to enhance battery life.
5. Inverters: Used in DC-AC inverter circuits for renewable energy systems.
6. Telecommunications: Supports signal switching and amplification in communication equipment.
These applications benefit from the MOSFET's fast switching speeds and high efficiency.