FQD7N10LTM

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FQD7N10LTM

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MOSFET N-CH 100V 5.8A DPAK

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series QFET®
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 5.8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V
Rds On(Max) @ Id Vgs 350mOhm @ 2.9A, 10V
Vgs(th)(Max) @ Id 2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 6 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 290 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Visão Geral

Description

The FQD7N10LTM is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 7A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.45Ω (at VGS = 10V)
- Fast Switching: Optimized for high-speed operation
- Package: TO-252 (DPAK), suitable for surface-mount designs
Commonly used in DC-DC converters, motor control, and power management circuits, it offers reliable performance with low conduction losses. Its compact package and robust specifications make it ideal for space-constrained, high-efficiency designs.
For detailed specs, refer to the datasheet from ON Semiconductor.

Equivalent

Equivalent products to the FQD7N10LTM (100V N-channel MOSFET) include:
- IRF540N (100V, 33A)
- STP55NF06L (60V, 55A) – lower voltage
- IRLZ44N (55V, 47A) – lower voltage
- FQP7N10C (100V, 7A) – similar specs
Check datasheets for exact compatibility in your circuit.

Features

The FQD7N10LTM is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 7A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.45Ω (at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- Logic-Level Gate Drive: Can be driven at 4.5V (VGS(th) ~1-2V)
- Package: TO-252 (DPAK), surface-mount design
- Low Gate Charge (Qg): Enhances switching performance
- Applications: Power management, DC-DC converters, motor control
This MOSFET is optimized for low-loss switching in compact power circuits.

Manufacturer

The FQD7N10LTM is a MOSFET manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.

Application

The FQD7N10LTM is an N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits, brushed motor drivers.
3. Switching Circuits – Load switches, power distribution.
4. Automotive Systems – Electronic control units (ECUs), lighting.
5. Consumer Electronics – Battery protection, inverters.
Its 100V drain-source voltage and low on-resistance make it suitable for efficient power switching in compact designs.

Package

The FQD7N10LTM is an N-channel MOSFET in a TO-252 (DPAK) surface-mount package. This package type offers efficient thermal performance and is commonly used for power applications. It has three pins (gate, drain, source) and includes a metal tab for heat dissipation. The compact design makes it suitable for space-constrained circuits.

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