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MOSFET P-CH 100V 6.6A DPAK
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Fabricanteonsemi
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Peça do Fabricante #FQD8P10TM-F085
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Pacote DPAK-3
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Em Estoque3431
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 6.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 530mOhm @ 3.3A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 470 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Visão Geral
Description
The FQD8P10TM-F085 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications. This particular model is part of Fairchild's automotive grade components, which indicates its robustness and reliability in demanding environments, such as those found in automotive systems. The MOSFET features a maximum drain-source voltage (V_DS) of -100V and a drain current (I_D) of -8.1A, making it suitable for moderate power applications. Its low on-resistance ensures efficient operation with minimal power loss.
The FQD8P10TM-F085 is built to withstand the harsh conditions encountered in automotive applications, with an operating temperature range that supports extreme environments. It also includes features like fast switching capabilities and protection against voltage spikes, which enhance its functionality and reliability. The device comes in a TO-252 package, facilitating easy installation on printed circuit boards (PCBs). Overall, the FQD8P10TM-F085 is a versatile and durable component, ideal for automotive power management, motor control, and other applications where efficiency and reliability are critical.
The FQD8P10TM-F085 is built to withstand the harsh conditions encountered in automotive applications, with an operating temperature range that supports extreme environments. It also includes features like fast switching capabilities and protection against voltage spikes, which enhance its functionality and reliability. The device comes in a TO-252 package, facilitating easy installation on printed circuit boards (PCBs). Overall, the FQD8P10TM-F085 is a versatile and durable component, ideal for automotive power management, motor control, and other applications where efficiency and reliability are critical.
Equivalent
The FQD8P10TM-F085 is a P-channel MOSFET. Equivalent products may include other P-channel MOSFETs with similar specifications such as voltage rating, current capacity, and package type. Examples include:
1. Vishay's Si4447DY
2. ON Semiconductor's NTP2955
3. Infineon's IPP136N12N3 G
Ensure to verify the electrical characteristics and package compatibility before selecting an equivalent.
1. Vishay's Si4447DY
2. ON Semiconductor's NTP2955
3. Infineon's IPP136N12N3 G
Ensure to verify the electrical characteristics and package compatibility before selecting an equivalent.
Features
The FQD8P10TM-F085 is a P-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_ds) of around -100V and a continuous drain current (I_d) of approximately -8A.
2. Low On-Resistance: The MOSFET offers low on-state resistance, which enhances efficiency by reducing power loss during operation.
3. Fast Switching Speed: Engineered for quick switching, making it suitable for high-frequency applications.
4. Thermal Performance: It is designed to handle significant power levels and dissipate heat effectively, aiding in maintaining device reliability.
5. Package Type: Generally available in a TO-252 (DPAK) package, which aids in thermal management and simplifies PCB mounting.
6. Rugged Design: Built to withstand harsh operating conditions, making it suitable for automotive and industrial applications.
These features make the FQD8P10TM-F085 ideal for use in power management, load switching, and other applications requiring efficient switching performance.
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_ds) of around -100V and a continuous drain current (I_d) of approximately -8A.
2. Low On-Resistance: The MOSFET offers low on-state resistance, which enhances efficiency by reducing power loss during operation.
3. Fast Switching Speed: Engineered for quick switching, making it suitable for high-frequency applications.
4. Thermal Performance: It is designed to handle significant power levels and dissipate heat effectively, aiding in maintaining device reliability.
5. Package Type: Generally available in a TO-252 (DPAK) package, which aids in thermal management and simplifies PCB mounting.
6. Rugged Design: Built to withstand harsh operating conditions, making it suitable for automotive and industrial applications.
These features make the FQD8P10TM-F085 ideal for use in power management, load switching, and other applications requiring efficient switching performance.
Pinout
The FQD8P10TM-F085 is a P-channel MOSFET. It typically features a standard 3-pin configuration common to discrete MOSFETs, which includes:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate relative to the source can turn the MOSFET on or off.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is on. It is connected to the load.
3. Source (S): The source is where the current enters the MOSFET. It is typically connected to ground in P-channel MOSFET applications when used in high-side switching.
The FQD8P10TM-F085 is specifically designed for automotive applications and is rated for operation at higher temperatures, up to 175°C, making it suitable for environments that demand high thermal and electrical performance.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate relative to the source can turn the MOSFET on or off.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is on. It is connected to the load.
3. Source (S): The source is where the current enters the MOSFET. It is typically connected to ground in P-channel MOSFET applications when used in high-side switching.
The FQD8P10TM-F085 is specifically designed for automotive applications and is rated for operation at higher temperatures, up to 175°C, making it suitable for environments that demand high thermal and electrical performance.
Manufacturer
The FQD8P10TM-F085 is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a multinational company that specializes in designing, manufacturing, and selling semiconductor components. These components are used in various applications, including automotive, industrial, computing, consumer electronics, and communications. onsemi focuses on energy-efficient solutions and operates in sectors such as power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices. The company is well-regarded for its contributions to enabling energy-efficient innovations and plays a significant role in advancing sustainable energy solutions.
Application
The FQD8P10TM-F085 is a P-channel MOSFET commonly used in automotive and industrial applications. It is well-suited for applications requiring efficient power management, such as DC-DC converters, motor control circuits, and load switching. Its features, like low on-resistance and high-temperature operation capability, make it ideal for use in environments where reliability and thermal performance are critical. Additionally, its compact size and robust design allow it to be used in tight spaces within automotive electronic systems and industrial control equipment.
Package
The FQD8P10TM-F085 is a P-channel MOSFET typically packaged in a surface-mount DPAK (TO-252) form factor. This package type is common for power transistors, providing efficient thermal performance and ease of mounting on printed circuit boards.
