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FQT3P20TF
+Lista de MateriaisMOSFET P-CH 200V 670MA SOT223-4
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Fabricanteonsemi
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Peça do Fabricante #FQT3P20TF
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Pacote SOT-223-4
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Em Estoque7023
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 670mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.7Ohm @ 335mA, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 250 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
Visão Geral
Description
Equivalent
1. IRF9530
2. FQP27P06
3. 2N5460
4. BSS84
5. ZVP4424A
These components may vary in specific parameters, so it's crucial to check datasheets to ensure compatibility with your application.
Features
1. Type: P-Channel MOSFET.
2. Voltage Rating: Can handle a drain-source voltage (V_DS) of up to 20V.
3. Current Rating: Capable of delivering continuous drain current (I_D) up to -3.6A.
4. R_DS(on): Exhibits a low on-resistance of approximately 70 mΩ, enhancing efficiency.
5. Gate Threshold Voltage: Typically around -1V to -3V for turn-on.
6. Package: Comes in a TO-220 package, facilitating ease of mounting and thermal management.
7. Temperature Range: Operates effectively over a broad temperature range, typically -55°C to 150°C.
8. Applications: Suited for switching applications, load switching, and power management in various electronic devices.
These features make the FQT3P20TF ideal for applications requiring efficient power control and low power loss.