IKD06N60R

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IGBT TRENCH 600V 12A TO252-3

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Especificações

Atributo Valor
Supplier Infineon Technologies,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series TrenchStop®
ProductStatus Obsolete
IGBTType Trench
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 12 A
Current-CollectorPulsed(Icm) 18 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 6A
Power-Max 100 W
SwitchingEnergy 330µJ
InputType Standard
GateCharge 48 nC
Td(on/off)@25°C 12ns/127ns
TestCondition 400V, 6A, 23Ohm, 15V
ReverseRecoveryTime(trr) 68 ns
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Visão Geral

Description

The IKD06N60R is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency switching applications. It is manufactured by Infineon Technologies. This component is known for its robust performance, combining the high-speed switching of a MOSFET with the high-current and low-saturation-voltage capabilities of a bipolar transistor.
Key Features:
1. Voltage and Current Ratings: Typically rated for a collector-emitter voltage (V_CE) of 600V and a continuous collector current (I_C) of 6A.
2. Switching Speed: Offers fast switching and low switching losses, making it suitable for high-frequency applications.
3. Package Type: Often available in surface-mount and through-hole packages, facilitating various design needs.
4. Applications: Used in motor drives, power supply units, inverters, and other applications requiring efficient energy conversion and control.
The IKD06N60R is often chosen for its balance of performance, reliability, and cost-effectiveness in power electronic circuits.

Equivalent

The IKD06N60R is a power MOSFET, and its equivalent products include the following: STP6NK60Z from STMicroelectronics, IRFB9N60A from Infineon Technologies, and FDPF7N60NZ from ON Semiconductor. These alternatives typically offer similar voltage and current ratings, suitable for comparable applications. Always verify the specifications to ensure compatibility in your specific application.

Features

The IKD06N60R is a power MOSFET that features a high voltage capability of 600V, making it suitable for a variety of high-voltage applications. It has a low on-resistance, which minimizes power losses and enhances efficiency in power conversion systems. The MOSFET is designed with fast switching characteristics, contributing to improved performance in switching applications. It also offers ruggedness and reliability, handling high avalanche energy for robust operation in demanding environments. The device typically comes in a TO-220 package, providing good thermal performance and ease of use in circuit designs. These features make the IKD06N60R suitable for applications such as power supplies, motor drives, and other high-efficiency electronic systems.

Pinout

The IKD06N60R is a power MOSFET produced by Infineon Technologies. It typically comes in a TO-220 package, which usually has 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the terminal where the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This terminal is connected to the ground or the lower potential of the circuit. It's the return path for the current flowing from the drain.
The IKD06N60R is typically used in high-efficiency power conversion applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IKD06N60R is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer known for producing a wide range of electronic components, including power semiconductors, automotive electronics, microcontrollers, and digital security systems. As a leading player in the semiconductor industry, Infineon serves various markets such as automotive, industrial power control, power management & multimarket, and digital security solutions. The company is recognized for its innovation and contributions to technology that enhance energy efficiency, mobility, and security.

Application

The IKD06N60R is an IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Its application areas include:
1. Motor Drives: Used in industrial and consumer motor control systems for variable speed drives.
2. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS).
3. Switching Power Supplies: Used in high-efficiency power conversion systems.
4. Lighting: Applicable in electronic ballasts for fluorescent and LED lighting systems.
5. Welding Equipment: Provides efficient current control for welding machines.
6. Induction Heating: Used in induction cooktops and industrial heating systems.
Its characteristics make it ideal for applications requiring efficient power management and high-speed switching.

Package

The IKD06N60R is typically available in a TO-252 package, also known as a DPAK. This package type is commonly used for power transistors and offers surface-mount capabilities with a compact design suitable for efficient thermal management.

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