IRF5810TRPBF

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IRF5810TRPBF

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MOSFET 2P-CH 20V 2.9A 6-TSOP

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Especificações

Atributo Valor
Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Obsolete
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 2.9A
RdsOn(Max)@IdVgs 90mOhm @ 2.9A, 4.5V
Vgs(th)(Max)@Id 1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 9.6nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 650pF @ 16V
Power-Max 960mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Visão Geral

Description

IRF5810TRPBF is an IR/Infineon N-channel power MOSFET (enhancement mode). The TRPBF suffix indicates a Pb-free, RoHS-compliant package variant suitable for high-current, high-speed switching.
Key points:
- Used as a fast, efficient switch in power electronics (DC–DC converters, motor drivers, power switches, etc.).
- Built-in body diode, allowing bidirectional current handling in switching topologies.
- Gate drive requirements and exact ratings (Vds, Id, Rds(on), thermal characteristics) depend on the specific part variant; refer to the datasheet for the precise values.
- Typically mounted on a heatsink or copper pad to manage losses; proper gate protection and ESD handling are advised.
How to use:
- Gate drive within specified Vgs range; avoid exceeding limits.
- Ensure operation within the safe operating area and provide adequate thermal management.
- Use per the application’s switching frequency and current demands.
For an exact, reliable overview (Vds, Id, Rds(on), package details, thermal resistance), consult the official IRF5810TRPBF datasheet from Infineon/IR.

Features

IRF5810TRPBF features (concise):
- N-channel enhancement-mode power MOSFET
- High-voltage device (Vds around 100 V)
- Low on-resistance for efficient conduction
- High continuous drain current capability
- Fast switching suitable for switching regulators and motor drivers
- Avalanche-rated/robust for inductive-load switching
- Good thermal performance and SOA compatibility
- Pb-free, RoHS compliant
- Tape & Reel (TR) packaging with Pb-free finish (TRPBF) for automated assembly
Typical applications: switching power supplies, DC-DC converters, motor control, and high-side/low-side switching. For exact electrical specs (Rds(on), Id, threshold, package details), consult the official datasheet.

Pinout

- Pin count: 3 (G, D, S); the tab is Drain.
- Function: N-channel enhancement-mode power MOSFET used for high-current switching/regulation.

Manufacturer

Manufacturer: Infineon Technologies AG (the IRF prefix comes from International Rectifier, now part of Infineon).
What kind of company: A German multinational semiconductor manufacturer that designs and markets power semiconductors, ICs, and system solutions for automotive, industrial, and electronics applications.

Application

IRF5810TRPBF is an N-channel enhancement MOSFET designed for fast, high‑current switching in power electronics. Common applications include:
- Switch‑mode power supplies and point‑of‑load DC‑DC converters (buck/boost/buck‑boost)
- Motor control and driver circuits (low‑side/high‑side switches, H‑bridge)
- Power management and load switching in adapters, battery systems, and inverters (solar, UPS)
- General high‑efficiency switching stages in consumer and industrial electronics
It’s suitable wherever a robust, efficient power switch is needed in high‑voltage/high‑current applications.

Package

TO-220AB (through-hole) package, Pb-free (RoHS compliant).

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