IRF5803TRPBF vs IRF5810TRPBF

Esta comparação detalhada entre IRF5803TRPBF e IRF5810TRPBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF5803TRPBF IRF5810TRPBF
Supplier - Infineon Technologies
Series HEXFET® HEXFET®
Part Status Obsolete Obsolete
FET Type P-Channel 2 P-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) 40 V 20V
Current - Continuous Drain(Id) @ 25°C - 2.9A
Rds On(Max) @ Id Vgs - 90mOhm @ 2.9A, 4.5V
Vgs(th)(Max) @ Id - 1.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 9.6nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 650pF @ 16V
Power - Max - 960mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IRF5803 -
Technology MOSFET (Metal Oxide) -
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V -
Power Dissipation (Max) 2W (Ta) -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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