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IRF7341TRPBF
+Lista de MateriaisMOSFET 2N-CH 55V 4.7A 8-SOIC
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF7341TRPBF
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Ficha Técnica IRF7341TRPBF DataSheet
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Pacote SO-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain(Id) @ 25°C | 4.7A |
| Rds On(Max) @ Id Vgs | 50mOhm @ 4.7A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 36nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 740pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
This MOSFET is commonly used in DC-DC converters, motor control circuits, and load switching. Its dual configuration allows for efficient handling of two separate loads or can be used in complementary arrangements. The IRF7341TRPBF operates over a wide temperature range, providing reliability in various environments. It is RoHS compliant, ensuring it meets environmental standards for electronic components. The MOSFET's robust design makes it ideal for applications requiring durable and consistent performance.
Equivalent
1. FDG6303N - Fairchild Semiconductor
2. Si4925DY - Vishay
3. NTMS4N02R2 - ON Semiconductor
4. BSS138 - NXP (for lower current applications)
Please verify specifications such as voltage, current, and package type to ensure compatibility with your application.
Features
1. Dual N-Channel MOSFET: Contains two MOSFETs in a single package, facilitating compact designs.
2. Low On-Resistance: Offers low R_DS(on), ensuring efficient operation with minimal power loss.
3. Fast Switching Speed: Provides quick transition times, which is beneficial for high-frequency applications.
4. Compact Package: Available in a Surface-Mount (SMD) package, aiding in space-saving on PCBs.
5. High Current Capability: Designed to handle significant current levels, suitable for various power applications.
6. Logic Level Gate Drive: Compatible with low voltage gate drive, making it versatile in digital circuit applications.
7. Thermal Performance: Efficient thermal characteristics, improving reliability and performance under load.
8. Lead-Free and RoHS Compliant: Environmentally friendly design, adhering to industry standards for hazardous substances.
These features make the IRF7341TRPBF ideal for applications like DC-DC converters, power management in portable devices, and other electronic systems requiring efficient power handling.
Pinout
This component comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. Here is a brief overview of its pin functions:
1. Pin 1 (G1): Gate of MOSFET 1
2. Pin 2 (S1): Source of MOSFET 1
3. Pin 3 (S1): Source of MOSFET 1 (connected internally to Pin 2)
4. Pin 4 (G2): Gate of MOSFET 2
5. Pin 5 (S2): Source of MOSFET 2
6. Pin 6 (S2): Source of MOSFET 2 (connected internally to Pin 5)
7. Pin 7 (D2): Drain of MOSFET 2
8. Pin 8 (D1): Drain of MOSFET 1
This configuration allows the IRF7341TRPBF to efficiently handle power switching tasks while conserving space on the PCB (Printed Circuit Board).