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IRF7910TRPBF
+Lista de MateriaisMOSFET 2N-CH 12V 10A 8SO
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF7910TRPBF
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Ficha Técnica IRF7910TRPBF DataSheet
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Especificações
| Atributo | Valor |
| Series | HEXFET® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF7910 |
Visão Geral
Description
The IRF7910TRPBF is a N-channel MOSFET designed for high-efficiency power switching applications. It features a low on-resistance (R_ds(on)), which minimizes power loss and heat generation, making it suitable for use in DC-DC converters, motor drivers, and other power management systems. With a maximum drain-source voltage (V_ds) of 100V and a continuous drain current (I_d) rating of 50A, it provides robust performance in demanding environments.
The device is packaged in a TO-220 form factor, allowing for efficient thermal management. Its fast switching speed enhances system responsiveness, while the built-in body diode ensures reliable operation in various configurations. The IRF7910TRPBF is ideal for applications requiring high reliability and efficiency in automotive, industrial, and consumer electronics sectors. Its compatibility with standard gate drive voltages simplifies integration into existing designs. Overall, the IRF7910TRPBF is a versatile component well-suited for modern power electronics applications.
The device is packaged in a TO-220 form factor, allowing for efficient thermal management. Its fast switching speed enhances system responsiveness, while the built-in body diode ensures reliable operation in various configurations. The IRF7910TRPBF is ideal for applications requiring high reliability and efficiency in automotive, industrial, and consumer electronics sectors. Its compatibility with standard gate drive voltages simplifies integration into existing designs. Overall, the IRF7910TRPBF is a versatile component well-suited for modern power electronics applications.
Equivalent
The IRF7910TRPBF is an N-channel MOSFET. Equivalent products include:
1. STP75NF75 (STMicroelectronics)
2. AOD6020 (Alpha & Omega Semiconductor)
3. FDD844N (Fairchild Semiconductor)
4. RFP30N06LE (ON Semiconductor)
Always check the specific datasheets for voltage, current ratings, and other parameters to ensure compatibility.
1. STP75NF75 (STMicroelectronics)
2. AOD6020 (Alpha & Omega Semiconductor)
3. FDD844N (Fairchild Semiconductor)
4. RFP30N06LE (ON Semiconductor)
Always check the specific datasheets for voltage, current ratings, and other parameters to ensure compatibility.
Features
The IRF7910TRPBF is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 68A, allowing for significant power handling.
3. R_DS(on): Low on-resistance of approximately 4.5 mΩ, facilitating reduced conduction losses and enhanced efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges between 2.0V to 4.0V, ensuring compatibility with low-voltage drive circuits.
5. Thermal Characteristics: Good thermal performance with a maximum junction temperature of 175°C, allowing for operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
These features make the IRF7910TRPBF suitable for applications in power supplies, motor control, and DC-DC converters, where efficiency and reliability are critical.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 68A, allowing for significant power handling.
3. R_DS(on): Low on-resistance of approximately 4.5 mΩ, facilitating reduced conduction losses and enhanced efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges between 2.0V to 4.0V, ensuring compatibility with low-voltage drive circuits.
5. Thermal Characteristics: Good thermal performance with a maximum junction temperature of 175°C, allowing for operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
These features make the IRF7910TRPBF suitable for applications in power supplies, motor control, and DC-DC converters, where efficiency and reliability are critical.
Pinout
The IRF7910TRPBF is a N-channel MOSFET with a package type of TO-220. It features a total of three pins.
The pin functions are as follows:
1. Gate (G): This pin controls the operation of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET. It connects to the load.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply.
The IRF7910TRPBF is designed for high-speed switching applications and is often used in power management and motor control circuits.
The pin functions are as follows:
1. Gate (G): This pin controls the operation of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET. It connects to the load.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply.
The IRF7910TRPBF is designed for high-speed switching applications and is often used in power management and motor control circuits.
Manufacturer
The IRF7910TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor and system solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on various sectors such as automotive, industrial power control, and security applications. Infineon is recognized for its innovation in power management and energy efficiency technologies, contributing significantly to advancements in sustainable energy and smart mobility solutions.
Application
The IRF7910TRPBF is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Serving as a high-efficiency switch in buck and boost converters.
2. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
3. Motor Control: Employed in motor drive circuits for efficient control of DC and stepper motors.
4. Load Switching: Utilized in high-power load switching applications.
5. Class D Amplifiers: Functions in audio amplification systems for increased efficiency.
These applications leverage its fast switching speeds and high current handling capabilities.
1. DC-DC Converters: Serving as a high-efficiency switch in buck and boost converters.
2. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
3. Motor Control: Employed in motor drive circuits for efficient control of DC and stepper motors.
4. Load Switching: Utilized in high-power load switching applications.
5. Class D Amplifiers: Functions in audio amplification systems for increased efficiency.
These applications leverage its fast switching speeds and high current handling capabilities.
Package
The IRF7910TRPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is suitable for high-power applications.
