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IRF9952TRPBF
+Lista de MateriaisMOSFET N/P-CH 30V 3.5A/2.3A 8SO
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF9952TRPBF
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Ficha Técnica IRF9952TRPBF DataSheet
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Especificações
| Atributo | Valor |
| Series | HEXFET® |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF995 |
Visão Geral
Description
The IRF9952TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management, switching, and amplification. This device features a low on-resistance, which enhances its efficiency in conducting current, making it suitable for use in power supplies, motor drivers, and DC-DC converters.
Key specifications include a maximum drain-source voltage (V_DS) of 55V, a continuous drain current (I_D) of up to 60A, and a low gate threshold voltage (V_GS(th)), allowing it to switch effectively at lower gate voltages. The IRF9952TRPBF is housed in a TO-220 package, facilitating easy heat dissipation during operation.
The "TRPBF" designation indicates a tape and reel packaging for automated assembly and that it is RoHS compliant, meaning it adheres to environmental regulations by being free from hazardous substances. Overall, this MOSFET is a reliable choice for high-efficiency, low-voltage applications in various electronic circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 55V, a continuous drain current (I_D) of up to 60A, and a low gate threshold voltage (V_GS(th)), allowing it to switch effectively at lower gate voltages. The IRF9952TRPBF is housed in a TO-220 package, facilitating easy heat dissipation during operation.
The "TRPBF" designation indicates a tape and reel packaging for automated assembly and that it is RoHS compliant, meaning it adheres to environmental regulations by being free from hazardous substances. Overall, this MOSFET is a reliable choice for high-efficiency, low-voltage applications in various electronic circuits.
Equivalent
The IRF9952TRPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, BSS138, and FQP30N06L. Look for similar specifications such as voltage rating, current rating, and on-resistance when searching for alternatives. Always verify datasheets for compatibility.
Features
The IRF9952TRPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management applications.
2. Current Rating: The maximum continuous drain current (I_D) is 120A, allowing it to handle substantial loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.017 ohms at V_GS = 10V, which reduces power losses and enhances efficiency.
4. Fast Switching: The device supports high-speed switching, beneficial for applications like DC-DC converters and motor drives.
5. Thermal Performance: Capable of operating at high temperatures, with a maximum junction temperature up to 175°C, it ensures reliability in demanding environments.
6. Package: It comes in a TO-220 package for effective heat dissipation and ease of mounting.
Overall, the IRF9952TRPBF is ideal for power electronics, automotive, and industrial applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management applications.
2. Current Rating: The maximum continuous drain current (I_D) is 120A, allowing it to handle substantial loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.017 ohms at V_GS = 10V, which reduces power losses and enhances efficiency.
4. Fast Switching: The device supports high-speed switching, beneficial for applications like DC-DC converters and motor drives.
5. Thermal Performance: Capable of operating at high temperatures, with a maximum junction temperature up to 175°C, it ensures reliability in demanding environments.
6. Package: It comes in a TO-220 package for effective heat dissipation and ease of mounting.
Overall, the IRF9952TRPBF is ideal for power electronics, automotive, and industrial applications.
Pinout
The IRF9952TRPBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows or prevents current flow between the drain and source.
2. Drain (D): This pin is the output where the current flows out of the transistor. It connects to the load in the circuit.
3. Source (S): This pin is the input where the current enters the transistor. It is typically connected to ground or the negative side of the power supply.
The IRF9952TRPBF is commonly used in power applications, including motor control, power management, and switching applications due to its low on-resistance and high-speed switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows or prevents current flow between the drain and source.
2. Drain (D): This pin is the output where the current flows out of the transistor. It connects to the load in the circuit.
3. Source (S): This pin is the input where the current enters the transistor. It is typically connected to ground or the negative side of the power supply.
The IRF9952TRPBF is commonly used in power applications, including motor control, power management, and switching applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The manufacturer of the IRF9952TRPBF is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in the design and production of a wide range of semiconductor solutions. Their product offerings include power management, automotive electronics, security ICs, and sensor technologies. Infineon serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and advanced technologies. The IRF9952TRPBF is a power MOSFET known for its high efficiency and performance in power applications.
Application
The IRF9952TRPBF is a N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Used in switching power supplies for efficient voltage regulation.
2. Motor Control: Employed in driving motors in industrial and automotive applications.
3. Battery Management Systems: Utilized in managing battery charging and discharging processes.
4. Power Amplifiers: Applied in RF amplifiers for signal amplification.
5. LED Drivers: Used in controlling LED lighting systems.
Its high efficiency and low on-resistance make it suitable for various power-related applications.
1. DC-DC Converters: Used in switching power supplies for efficient voltage regulation.
2. Motor Control: Employed in driving motors in industrial and automotive applications.
3. Battery Management Systems: Utilized in managing battery charging and discharging processes.
4. Power Amplifiers: Applied in RF amplifiers for signal amplification.
5. LED Drivers: Used in controlling LED lighting systems.
Its high efficiency and low on-resistance make it suitable for various power-related applications.
Package
The IRF9952TRPBF is packaged in a TO-220 style format. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
