IRFP250PBF

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IRFP250PBF

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MOSFET N-CH 200V 30A TO247-3

  • FabricanteVishay Siliconix

  • Peça do Fabricante #IRFP250PBF

  • Pacote TO-247-3

  • Em Estoque1442

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Especificações

Atributo Valor
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 30A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 85mOhm @ 18A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 140 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2800 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC

Visão Geral

Description

The IRFP250PBF is a N-channel Power MOSFET designed for high-speed switching applications. It is part of the HEXFET® series from Infineon Technologies, known for their efficient power handling and thermal performance. This MOSFET features a 200V drain-source breakdown voltage and a continuous drain current of approximately 30A, making it suitable for medium to high power applications.
With a low on-state resistance (R_DS(on)) of around 0.085 ohms, it offers reduced power loss and improved efficiency. The device is housed in a TO-247 package, which enables excellent heat dissipation and reliability. The IRFP250PBF is commonly utilized in power supply units, motor controllers, and other applications requiring efficient power conversion and management.
Its lead-free and RoHS-compliant status ensures that it is environmentally friendly. This MOSFET is designed to handle significant power levels with minimal thermal impact, making it a versatile choice for engineers working on robust electronic systems.

Equivalent

The IRFP250PBF is a power MOSFET commonly used for high-speed switching applications. Equivalent products include:
- STMicroelectronics' STP22NF10
- ON Semiconductor’s FDP22N50
- Vishay’s IRFP260N
- Fairchild’s FDPF22N50
These alternatives may not be exact substitutes due to differences in specifications like voltage, current ratings, or package types, so it's essential to compare the datasheets to ensure compatibility with your specific application.

Features

The IRFP250PBF is a power MOSFET that offers several key features:
1. Voltage and Current Ratings: It typically has a drain-to-source voltage (V_DS) of 200V and a continuous drain current (I_D) of approximately 30A, making it suitable for high-power applications.
2. R_DS(on): The on-resistance is relatively low, around 85 milliohms, which contributes to higher efficiency by reducing power loss during operation.
3. Package Type: It comes in a TO-247 package, which provides good thermal performance and is suitable for use with external heatsinks.
4. Fast Switching: The MOSFET is designed for fast switching, improving performance in applications like switching power supplies, motor drives, and other high-speed electronic systems.
5. Temperature Range: It operates over a wide temperature range, typically from -55°C to 175°C, ensuring reliability under various conditions.
6. Lead-Free: The PBF suffix indicates it is lead-free, complying with RoHS directives for environmentally friendly electronic components.
These features make the IRFP250PBF a versatile choice for high-power and high-efficiency applications.

Pinout

The IRFP250PBF is a power MOSFET, specifically an N-channel MOSFET used for switching and amplification applications. It typically comes in a TO-247 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the conductivity of the MOSFET by applying a voltage. Applying a positive voltage relative to the source will turn the MOSFET on, allowing current to flow between the source and drain.
2. Drain (D): This pin is connected to the load and is the terminal through which the main current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the reference point in the circuit. It is the terminal from which the current leaves the MOSFET.
The IRFP250PBF is used in applications such as power supplies, motor drives, and other high-power applications due to its high current and voltage handling capabilities.

Manufacturer

The IRFP250PBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company that produces a wide range of electronic components, including power semiconductors, microcontrollers, sensors, and security solutions. Headquartered in Neubiberg, Germany, Infineon is known for its focus on innovation and sustainable technology solutions. The company serves various industries, including automotive, industrial, consumer electronics, and communication sectors, providing critical components that enhance energy efficiency, performance, and security in modern electronic systems.

Application

The IRFP250PBF is a power MOSFET commonly used in applications requiring high-speed switching and efficiency. Key application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for improved efficiency and performance.
2. Motor Drives: Employed in motor control circuits for industrial and consumer applications.
3. Inverters: Utilized in power inverters for renewable energy systems and uninterruptible power supplies (UPS).
4. Audio Amplifiers: Applied in Class D audio amplifiers for enhanced sound quality.
5. Lighting: Used in high-intensity lighting applications, such as LED drivers.
These applications leverage its high current capacity, fast switching speed, and low on-resistance.

Package

The IRFP250PBF is a power MOSFET available in a TO-247 package.

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