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IRFP250PBF
+Lista de MateriaisMOSFET N-CH 200V 30A TO247-3
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FabricanteVishay Siliconix
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Peça do Fabricante #IRFP250PBF
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 140 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2800 pF @ 25 V |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
Visão Geral
Description
With a low on-state resistance (R_DS(on)) of around 0.085 ohms, it offers reduced power loss and improved efficiency. The device is housed in a TO-247 package, which enables excellent heat dissipation and reliability. The IRFP250PBF is commonly utilized in power supply units, motor controllers, and other applications requiring efficient power conversion and management.
Its lead-free and RoHS-compliant status ensures that it is environmentally friendly. This MOSFET is designed to handle significant power levels with minimal thermal impact, making it a versatile choice for engineers working on robust electronic systems.
Equivalent
- STMicroelectronics' STP22NF10
- ON Semiconductor’s FDP22N50
- Vishay’s IRFP260N
- Fairchild’s FDPF22N50
These alternatives may not be exact substitutes due to differences in specifications like voltage, current ratings, or package types, so it's essential to compare the datasheets to ensure compatibility with your specific application.
Features
1. Voltage and Current Ratings: It typically has a drain-to-source voltage (V_DS) of 200V and a continuous drain current (I_D) of approximately 30A, making it suitable for high-power applications.
2. R_DS(on): The on-resistance is relatively low, around 85 milliohms, which contributes to higher efficiency by reducing power loss during operation.
3. Package Type: It comes in a TO-247 package, which provides good thermal performance and is suitable for use with external heatsinks.
4. Fast Switching: The MOSFET is designed for fast switching, improving performance in applications like switching power supplies, motor drives, and other high-speed electronic systems.
5. Temperature Range: It operates over a wide temperature range, typically from -55°C to 175°C, ensuring reliability under various conditions.
6. Lead-Free: The PBF suffix indicates it is lead-free, complying with RoHS directives for environmentally friendly electronic components.
These features make the IRFP250PBF a versatile choice for high-power and high-efficiency applications.
Pinout
1. Gate (G): This pin is used to control the conductivity of the MOSFET by applying a voltage. Applying a positive voltage relative to the source will turn the MOSFET on, allowing current to flow between the source and drain.
2. Drain (D): This pin is connected to the load and is the terminal through which the main current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the reference point in the circuit. It is the terminal from which the current leaves the MOSFET.
The IRFP250PBF is used in applications such as power supplies, motor drives, and other high-power applications due to its high current and voltage handling capabilities.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for improved efficiency and performance.
2. Motor Drives: Employed in motor control circuits for industrial and consumer applications.
3. Inverters: Utilized in power inverters for renewable energy systems and uninterruptible power supplies (UPS).
4. Audio Amplifiers: Applied in Class D audio amplifiers for enhanced sound quality.
5. Lighting: Used in high-intensity lighting applications, such as LED drivers.
These applications leverage its high current capacity, fast switching speed, and low on-resistance.