IRG4PC30UDPBF

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IRG4PC30UDPBF

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IGBT 600V 23A 100W TO247AC

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Especificações

Atributo Valor
Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 23 A
Current-CollectorPulsed(Icm) 92 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 12A
Power-Max 100 W
SwitchingEnergy 380µJ (on), 160µJ (off)
InputType Standard
GateCharge 50 nC
Td(on/off)@25°C 40ns/91ns
TestCondition 480V, 12A, 23Ohm, 15V
ReverseRecoveryTime(trr) 42 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Visão Geral

Description

The IRG4PC30UDPBF is a specific type of Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It is designed for use in power electronics applications, offering efficient switching and high current handling capabilities. This IGBT is part of the IRG4PC series, known for robust performance in demanding environments.
Key features of the IRG4PC30UDPBF include a high voltage rating, typically around 600 volts, and a current rating suitable for various medium to high-power applications. It is designed to enhance system efficiency with low switching losses and is suitable for use in inverters, motor drives, and other power conversion systems.
The component comes in a TO-247AC package, facilitating heat dissipation and ease of integration into electronic circuits. Its design includes features like a fast switching speed and a rugged build, making it reliable and durable under thermal and electrical stress. Overall, the IRG4PC30UDPBF is a versatile IGBT that balances performance and reliability for modern electronic applications.

Equivalent

The IRG4PC30UDPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for high-speed switching applications. Equivalent products to consider include:
1. ST Microelectronics STGW30H60DFB
2. Infineon Technologies IGW30N60H3
3. ON Semiconductor FGA30N60UFDTU
4. Toshiba GT30J341
These alternatives offer similar electrical characteristics and performance, making them suitable substitutes in most applications. Always verify specific requirements like voltage, current ratings, and package type to ensure compatibility.

Features

The IRG4PC30UDPBF is a discrete IGBT (Insulated Gate Bipolar Transistor) designed to deliver high efficiency and fast switching capabilities. Key features include:
1. Voltage and Current Ratings: It typically supports a collector-emitter voltage (V_CES) of 600V and a continuous collector current (I_C) of 27A, making it suitable for a variety of high-power applications.
2. Low On-State Voltage Drop: This feature enhances efficiency by reducing conduction losses when the device is in the 'on' state.
3. Fast Switching Speed: Its design supports rapid switching, which is essential for high-frequency applications.
4. Rugged Construction: The IRG4PC30UDPBF offers robust performance with a high level of electrical and thermal stability, making it suitable for demanding environments.
5. Thermal Characteristics: The device has good thermal performance, often supported by a TO-247 package that helps in effective heat dissipation.
6. Complementary Diode: It includes a freewheeling diode for inductive load applications, which helps manage voltage spikes.
These features make the IRG4PC30UDPBF ideal for use in motor drives, inverters, power supplies, and other high-power electronics.

Pinout

The IRG4PC30UDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. This device is commonly used in motor drives, power inverters, and other power electronics applications. The IRG4PC30UDPBF typically comes in a TO-247 package, which has three pins. The pin configuration is as follows:
1. Collector (C): This pin is the terminal through which the current flows from the load into the transistor.
2. Gate (G): This pin is used to control the transistor. By applying a voltage to the gate, the IGBT can be turned on or off.
3. Emitter (E): This pin is the terminal through which current exits the transistor and returns to the power supply.
These pins allow for efficient control and switching of high-current loads, making the IRG4PC30UDPBF suitable for applications requiring efficient power management.

Manufacturer

The IRG4PC30UDPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductors and system solutions. The company focuses on automotive, industrial power control, power management and multimarket, and digital security solutions. Infineon's products are used in a wide variety of applications, from automotive electronics and industrial power control to communication devices and smart card applications. The company is known for its innovation and technological advancements in the semiconductor industry.

Application

The IRG4PC30UDPBF is an insulated gate bipolar transistor (IGBT) commonly used in various applications due to its efficiency and switching capabilities. Key application areas include:
1. Industrial Motor Drives: Used for controlling the speed and torque of electric motors in industrial applications.
2. Inverters: Utilized in solar power systems and uninterruptible power supplies (UPS) for converting DC to AC power.
3. Switch-Mode Power Supplies (SMPS): Employed in power supply systems to enhance efficiency and power density.
4. HVAC Systems: Used in heating, ventilation, and air conditioning systems for efficient energy management.
5. Welding Equipment: Provides the necessary power control in welding devices.
These applications leverage the IGBT's high efficiency and fast switching capabilities.

Package

The IRG4PC30UDPBF is an Insulated Gate Bipolar Transistor (IGBT) with a TO-247 package type. This package is designed for high power and high frequency applications, providing efficient thermal management and electrical performance.

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